Abstract:Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, which have a high degree of crystallinity and outstanding electrical and optical properties, using molecular-beam epitaxy by controlling catalyst alloy segregation. In our approach, two-dimensional InAs nanosheets can be obtained directly from one-dimensional InAs nanowires by silver-indium alloy segregation, which is much easier than all previously reported method, such as traditional buffering technique and select area epitaxial growth. Detailed transmission electron microscopy investigations provide a solid evidence that the catalyst alloy segregation is the origination of the InAs dimensional transformation from one-dimensional nanowires to two-dimensional nanosheets, and even to three-dimensional complex crosses. Using this method, we find that the wafer-scale free-standing InAs nanosheets can be grown on various substrates including Si, MgO, sapphire and GaAs etc. The InAs nanosheets grown at high temperature are pure phase single crystals and have a high electron mobility and a long time-resolved THz kinetics lifetime. Our work will open up a conceptually new and general technology route toward the effective controlling the dimension of the low-dimensional III-V semiconductors. It may also enable the low-cost fabrication of free-standing nanosheet-based devices on an industrial scale.

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Large-composition-range pure-phase homogeneous InAs$_{1-x}$Sb$_x$ nanowires

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Realization Of Vertically Aligned, Ultrahigh Aspect Ratio Inassb Nanowires On Graphite

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Free-Standing Two-Dimensional Single-Crystalline InSb Nanosheets.

Straight Indium Antimonide Nanowires with Twinning Superlattices Via a Solution Route.

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale

InAs/InP radial nanowire heterostructures as high electron mobility devices.

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires