Abstract:Photoluminescence (PL) as a conventional yet powerful optical spectroscopy may provide crucial insight into the mechanism of carrier recombination and bandedge structure in semiconductors. In this study, mid-infrared PL measurements on vertically aligned InAs nanowires (NWs) are realized for the first time in a wide temperature range of up to 290 K, by which the radiative recombinations are clarified in the NWs grown on n- and p-type Si substrates, respectively. A dominant PL feature is identified to be from the type-II optical transition across the interfaces between the zinc-blend (ZB) and the wurtzite (WZ) InAs, a lower-energy feature at low temperatures is ascribed to impurity-related transition, and a higher energy feature at high temperatures originates in the interband transition of the WZ InAs being activated by thermal-induced electron transfer. The optical properties of the ZB-on-WZ and WZ-on-ZB interfaces are asymmetric, and stronger nonradiative recombination and weaker carrier-phonon interaction show up in the NWs on p-type substrate in which built-in electric field forms and leads to carrier assembling around the WZ-on-ZB interface. The results indicate that wide temperature-range infrared PL analysis can serve as efficient vehicle for clarifying optical properties and bandedge processes of the crystal-phase interfaces in vertically aligned InAs NWs.

Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

Straight Indium Antimonide Nanowires with Twinning Superlattices Via a Solution Route.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Ultrasmall Single-Crystal Indium Antimonide Nanowires

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Synthesis of Mn-Doped Indium Antimonide Nanowires by Multi-Step Depositions and Annealing

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Control of morphology and crystal purity of InP nanowires by variation of phosphine flux during selective area MOMBE

Coherent Twinning Phenomena: Towards Twinning Superlattices in III-V Semiconducting Nanowires.

Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Synthesis and Phase Transformation of In2se3 and Cuinse2 Nanowires

Midinfrared Photoluminescence Up to 290 K Reveals Radiative Mechanisms and Substrate Doping-Type Effects of Inas Nanowires

Synthesis of tin-doped indium oxide nanowires by self-catalytic VLS growth

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Self-Nucleation Growth of Insb Nanowires Based on Indium Droplets under the Assistance of Au Nano-Particles by Mocvd

Synthesis of InAs nanowires via a low-temperature solvothermal route.

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Ultra-fast Photodetectors Based on High-Mobility Indium Gallium Antimonide Nanowires

Heterotwin Zn3P2 superlattice nanowires: the role of indium insertion in the superlattice formation mechanism and their optical properties