Observation and Ultrafast Dynamics of Inter‐Sub‐Band Transition in InAs Twinning Superlattice Nanowires

Mengfei Xue,Ming Li,Yisheng Huang,Runkun Chen,Yunliang Li,Jingyun Wang,Yingjie Xing,Jianjun Chen,Hugen Yan,Hongqi Xu,Jianing Chen

DOI: https://doi.org/10.1002/adma.202004120

IF: 29.4

2020-09-02

Advanced Materials

Abstract:<p>A variety of infrared applications rely on semiconductor superlattices, including, notably, the realization of high‐power, compact quantum cascade lasers. Requirements for atomically smooth interface and limited lattice matching options set high technical standards for fabricating applicable heterostructure devices. The semiconductor twinning superlattice (TSL) forms in a single compound with periodically spaced twin boundaries and sharp interface junctions and can be grown with convenient synthesis methods. Therefore, employing semiconductor TSL may facilitate the development of optoelectronic applications related to superlattice structures. Here, it is shown that InAs TSL nanowires generate inter‐sub‐band transition channels due to the band projection and the Bragg‐like electron reflection. The findings reveal the physical mechanisms of inter‐sub‐band transitions in TSL structure and suggest that TSL structures are promising candidates for mid‐infrared optoelectronic applications.</p>

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to observe and study the phenomenon of inter - sub - band transition and its dynamic process in InAs twin - superlattice nanowires. Specifically, the researchers used near - field optical microscopy technology (s - SNOM), near - field Fourier - transform infrared spectroscopy technology (nano - FTIR), and near - field pump - probe technology to explore the mid - infrared (MIR) inter - sub - band transitions in InAs twin - superlattice nanowires. These transitions are caused by band projection and Bragg - type electron reflection, which provides a new material system for mid - infrared optoelectronic applications.

The key findings of the paper include:
1. **Observation of inter - sub - band transitions**: Unique mid - infrared inter - sub - band transitions were observed in InAs twin - superlattice nanowires. These transitions are different from those in traditional quantum well structures and are caused by periodic scattering at the twin - interface.
2. **Study of dynamic processes**: Through near - field pump - probe experiments, the dynamic processes of these transitions were studied. It was found that the injected photogenerated electrons would lead to the emergence of new absorption channels, and these channels would disappear after a specific time.
3. **Verification of theoretical models**: The Drude - Lorentz model was used to fit the experimental data to verify the physical mechanisms of these transitions.

In summary, this research provides a new material system for mid - infrared optoelectronic applications and reveals unique physical phenomena in twin - superlattice nanowires.