Abstract:Submitted for the MAR14 Meeting of The American Physical Society Plasmonic and Photonic Lasers Based on Semiconductor Nanowires: Low-loss and High Mode-tunablity QIHUA XIONG, QING ZHANG, XINFENG LIU, TZECHIEN SUM, School of Physical and Mathematical Sciences, Nanyang Technological University — Understanding the optical gain and mode-selection mechanisms in semiconductor nanowire (NW) based photonic and plasmonic laser is key to the development of high-performance nanoscale oscillators/amplifiers/lasers. Modification of semiconductor band structure through electric field modulation, or alloying semiconductors has so far gained limited success in achieving output mode tunability of the NW laser due to the considerable optical losses. Herein we demonstrate a new optical self-feedback mechanism based on the intrinsic self-absorption of the gain media and plasmonic enhanced Burstein– Moss effect to achieve low-loss photonic and plasmonic lasing with a high degree of mode selectivity (over 30 nm). Moreover, we demonstrate the first room-temperature ultra-violet (∼ 370 nm) plasmonic nanolaser with an extremely-low-threshold (∼ 3.5 MW/cm2). A closed-contact planar semiconductor-insulator-metal interface greatly lessens the extrinsic cavity loss, and efficiently promotes the exciton-plasmon energy transfer thus furnishes adequate optical gain to compensate the loss. Our straightforward approaches are widely applicable in most semiconductor NW plasmonic/photonic cavities. Qihua Xiong School of Physical and Mathematical Sciences, Nanyang Technological University Date submitted: 15 Nov 2013 Electronic form version 1.4

Optically Tunable Transient Plasmons in InSb Nanowires

Hybrid Photon-Plasmon Nanowire Lasers

Ultra-broadband Optical Switching Plasmons Waveguide in Ge Nanowires

Ultrafast infrared plasmon switching in aligned carbon-nanotube optical resonators

Optical Detection of Plasmonic and Interband Excitations in 1-Nm-wide Indium Atomic Wires

Broadly Tunable Plasmons in Doped Oxide Nanoparticles for Ultrafast and Broadband Mid-Infrared All-Optical Switching.

Integration of Plasmonics into Nanoelectronic Circuits

Speed-up electronic integrated circuits with plasmonic technology

Broadband plasmonic indium arsenide photonic antennas

Photochemically Derived Plasmonic Semiconductor Nanocrystals As an Optical Switch for Ultrafast Photonics

Photothermal Modulation of Propagating Surface Plasmons on Silver Nanowires

Tunable Low Loss 1D Surface Plasmons in InAs Nanowires

InAs-Nanowire-Based Broadband Ultrafast Optical Switch.

Optical switching of Terahertz surface plasmon polaritons propagating on an indium antimonide surface

Plasmon-Induced Heterointerface Thinning for Schottky Barrier Modification of Core/Shell SiC/SiO2 Nanowires.

Plasmonic and Photonic Lasers Based on Semiconductor Nanowires: Low-loss and High Mode-tunablity

Ultrafast Modulation of Exciton–Plasmon Coupling in a Monolayer WS2–Ag Nanodisk Hybrid System

Semiconductor Nanowire Plasmonic Lasers

High-contrast Switching and High-Efficiency Extracting for Spontaneous Emission Based on Tunable Gap Surface Plasmon.

Universal Near-Infrared and Mid-Infrared Optical Modulation for Ultrafast Pulse Generation Enabled by Colloidal Plasmonic Semiconductor Nanocrystals.

Optoelectronic tuning of plasmon resonances via optically modulated hot electrons