Abstract:By boosting the emission strength by a factor of 100, a new hybrid photonic‒plasmonic architecture is successfully demonstrated to realize low‐threshold room‐temperature UV nanolasers that can be monolithically integrated into silicon. The synergistic engineering of the metal‒semiconductor heterojunction, the modal reflectivity, and the intermodal coupling engender the realization of electrically driven nanolasers. The metal‒semiconductor heterojunction is imperative for the realization of electrically driven nanolasers for chip‐level platforms. Progress in developing such nanolasers has hitherto rarely been realized, however, because of their complexity in heterojunction fabrication and the need to use noble metals that are incompatible with microelectronic manufacturing. Most plasmonic nanolasers lase either above a high threshold (101‒103 MW cm−2) or at a cryogenic temperature, and lasing is possible only after they are removed from the substrate to avoid the large ohmic loss and the low modal reflectivity, making monolithic fabrication impossible. Here, for the first time, record‐low‐threshold, room‐temperature ultraviolet (UV) lasing of plasmon‐coupled core‒shell nanowires that are directly grown on silicon is demonstrated. The naturally formed core‒shell metal‒semiconductor heterostructure of the nanowires leads to a 100‐fold improvement in growth density over previous results. This unprecedentedly high nanowire density creates intense plasmonic resonance, which is outcoupled to the resonant Fabry‒Pérot microcavity. By boosting the emission strength by a factor of 100, the hybrid photonic‒plasmonic system successfully facilitates a record‐low laser threshold of 12 kW cm−2 with a spontaneous emission coupling factor as high as ≈0.32 in the 340‒360 nm range. Such architecture is simple and cost‐competitive for future UV sources in silicon integration.

Plasmonic and Photonic Lasers Based on Semiconductor Nanowires: Low-loss and High Mode-tunablity

Hybrid Photon-Plasmon Nanowire Lasers

Single-mode Nanolasers Based on FP-WGM Hybrid Cavity Coupling.

Semiconductor Nanowire Plasmonic Lasers

Tailoring the Lasing Modes in Semiconductor Nanowire Cavities Using Intrinsic Self-Absorption.

Semiconductor Plasmon Laser

Wavelength Tunable Plasmonic Lasers Based on Intrinsic Self-Absorption of Gain Material

Low-Threshold Multiwavelength Plasmonic Nanolasing in an "H"-Shape Cavity

Ultra-strong Mode Confinement at Semishell Metal/insulator/semiconductor Interface for Nanolaser

Room-Temperature Low-Threshold Plasmonic Nanolaser through Mode-Tailoring at Communication Wavelengths

Tunable Artificial Plasmonic Nanolaser with Wide Spectrum Emission Operating at Room Temperature

Near-infrared Hybrid Plasmonic Multiple Quantum Well Nanowire Lasers.

Room Temperature Semiconductor Plasmon Laser

A Room Temperature Low-Threshold Ultraviolet Plasmonic Nanolaser

Advances of Plasmonic Nanolasers

Lasers: Manipulable and Hybridized, Ultralow‐Threshold Lasing in a Plasmonic Laser Using Elliptical InGaN/GaN Nanorods (adv. Funct. Mater. 37/2017)

Mode Control And Loss Compensation Of Propagating Surface Plasmons

Theoretical Study of a Planar Structure Plasmonic Nanolaser in Visible Regime

Realization of Perovskite‐Nanowire‐Based Plasmonic Lasers Capable of Mode Modulation

Room‐Temperature Single‐Mode Plasmonic Perovskite Nanolasers with Sub‐Picosecond Pulses

On‐Chip Monolithically Integrated Ultraviolet Low‐Threshold Plasmonic Metal‒Semiconductor Heterojunction Nanolasers