Abstract:In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III-V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the , and orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III-V substrates. The InAs nanowires and nanowire networks are zincblende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

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Growth of Pure Wurtzite InAs Nanowires over a Wide Diameter Range

Self‐catalysed Growth of InAs Nanowires on Bare Si Substrates by Droplet Epitaxy

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Self-catalyzed Growth of InAs Nanowires on InP Substrate

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Large-composition-range pure-phase homogeneous InAs$_{1-x}$Sb$_x$ nanowires

Crystal Phase Control in Self-Catalyzed GaAs Nanowires Grown on Pre-Etched Si Substrates

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

In Situ Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Synthesis and characterizations of ternary InGaAs nanowires by a two-step growth method for high-performance electronic devices.

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale