Abstract:Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that introducing a graded interface in nanowire heterostructures offers an additional parameter to control strain. For a given interface length and lattice mismatch, we first derive theoretically the maximum nanowire radius below which coherent growth is possible. We validate these findings by growing and characterizing various In(Ga)As/GaAs nanowire heterostructures with graded interfaces. Furthermore, we perform a complete chemical and structural characterization of the interface by combining energy-dispersive X-ray spectroscopy and high resolution transmission electron microscopy. In the case of coherent growth, we directly observe that the mismatch strain relaxes elastically on the side walls of the nanowire around the interface area, while the core of the nanowire remains partially strained. Moreover, our experimental data show good agreement with finite element calculations. This analysis confirms in particular that mechanical strain is largely reduced by interface grading. Overall, our work extends the parameter space for the design of nanowire heterostructures, thus opening new opportunities for nanowire optoelectronics.

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growth and characterization of GaAs/In χ Ga 1-χ As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces

Growths of InAs/GaAs and InAs/In x Ga 1- x As/GaAs nanowire heterostructures

Realization of Vertical GaAs/InAs Nanowire Heterostructures on Si Substrate

Growths of InAs/GaAs and InAs/In X Ga1-x As/GaAs Nanowire Heterostructures

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Growth and Characterization of GaAs/InxGa1−xAs/GaAs Axial Nanowire Heterostructures with Symmetrical Heterointerfaces

VLS Growth of GaAs/InGaAs/GaAs Axial Double-Heterostructure Nanowires

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Axial GaAs/Ga(As,Bi) Nanowire Heterostructures

Catalyst-free Growth of Lateral InAs Nanowires

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure

Failure and Formation of Axial Nanowire Heterostructures in Vapor-Liquid-Solid Growth

Composition and optical properties of (In,Ga)As nanowires grown by group-III-assisted molecular beam epitaxy

Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE