Abstract:Because of the inevitable Fermi level pinning on surface/interface states of nanowires, achieving high-performance nanowire devices with controllable nanoscale contacts is always challenging but important. Herein, single-crystalline heterostructured Ga/GaAs nanowires with sharp hetero-Schottky interfaces have been successfully synthesized on amorphous substrates by utilizing Au nanoparticles as catalytic seeds via chemical vapor deposition. These nanowires are found to grow with the hemispherical Au7Ga2 catalytic tips following the vapor-liquid-solid mechanism. During the growth, simply by manipulating the source and growth temperatures, the Ga precipitation rate from Au-Ga alloy tips as well as the reaction rate of Ga precipitates with As can be reliably controlled in order to tailor the length (0-170 nm) of Ga nanowire segments obtained in the heterostructure. When configured into field-effect transistors, these Ga/GaAs NWs exhibit the p-type conductivity with a sharp hetero-Schottky barrier of similar to 1.0 eV at the atomically connected Ga segment/ GaAs NW body interface, in which this barrier height is close to the theoretical difference between the GaAs Fermi level (5.15.3 eV) and the Ga work function (similar to 4.3 eV), suggesting the effective formation of nanoscale contact by minimizing the Fermi level pinning, being advantageous for advanced nanoelectronics.

Growths of InAs/GaAs and InAs/In X Ga1-x As/GaAs Nanowire Heterostructures

Growths of InAs/GaAs and InAs/In x Ga 1- x As/GaAs nanowire heterostructures

Growth of Straight InAs-on-GaAs Nanowire Heterostructures

VLS Growth of GaAs/InGaAs/GaAs Axial Double-Heterostructure Nanowires

Realization of Vertical GaAs/InAs Nanowire Heterostructures on Si Substrate

Growth and characterization of GaAs/In χ Ga 1-χ As/GaAs axialnanowire heterostructures with symmetrical heterointerfaces

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Growth and Characterization of GaAs/InxGa1−xAs/GaAs Axial Nanowire Heterostructures with Symmetrical Heterointerfaces

Growth of GaAs/InAs vertical nanowires on GaAs (111)b by metalorganic chemical vapor deposition

Growth and Properties of III–V Compound Semiconductor Heterostructure Nanowires

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Dislocation-free axial InAs-on-GaAs nanowires on silicon

Growth Behavior of Epitaxial Semiconductor Axial Nanowire Heterostructures

New Growth Mechanism of InAs-GaSb Core-Shell Nanowires with Polygonal Triangular Pyramids and Quantum Dots Grown by MOCVD

Controllable Growth and Optical Properties of Inp and Inp/Inas Nanostructures on the Sidewalls of Gaas Nanowires

Growth and characterization of compound semiconductor nanowires on Si

The Self-Seeded Growth of InAsSb Nanowires on Silicon by Metal-Organic Vapor Phase Epitaxy

Failure and Formation of Axial Nanowire Heterostructures in Vapor-Liquid-Solid Growth

Controlled Growth of Heterostructured Ga/GaAs Nanowires with Sharp Schottky Barrier

Structural Characteristics of GaSb∕GaAs Nanowire Heterostructures Grown by Metal-Organic Chemical Vapor Deposition