Abstract:In-plane InAs nanowires and nanowire networks show great potential to be used as building blocks for electronic, optoelectronic and topological quantum devices, and all these applications are keen to grow the InAs materials directly on Si substrates since it may enable nanowire electronic and quantum devices with seamless integration with Si platform. However, almost all the in-plane InAs nanowires and nanowire networks have been realized on substrates of III-V semiconductors. Here, we demonstrate the selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates. We find that the selectivity of InAs growth on Si substrates is mainly dependent on the growth temperature, while the morphology of InAs nanowires is closely related to the V/III flux ratio. We examine the cross-sectional shapes and facets of the InAs nanowires grown along the , and orientations. Thanks to the non-polar characteristics of Si substrates, the InAs nanowires and nanowire networks exhibit superior symmetry compared to that grown on III-V substrates. The InAs nanowires and nanowire networks are zincblende (ZB) crystals, but there are many defects in the nanowires, such as stacking faults, twins and grain boundaries. The crystal quality of InAs nanowires and nanowire networks can be improved by increasing the growth temperature within the growth temperature window. Our work demonstrates the feasibility of selective area epitaxial growth of in-plane InAs nanowires and nanowire networks on Si substrates.

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Large‐area, Catalyst‐free Heteroepitaxy of InAs Nanowires on Si by MOVPE

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Growth of Catalyst-Free Epitaxial InAs Nanowires on Si Wafers Using Metallic Masks.

Self‐catalysed Growth of InAs Nanowires on Bare Si Substrates by Droplet Epitaxy

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Catalyst-free Growth of Lateral InAs Nanowires

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Silver-assisted growth of high-quality InAs 1- x Sb x nanowires by molecular-beam epitaxy

Self-catalyzed Growth of InAs Nanowires on InP Substrate

Growth and Characterization of Straight Inas/Gaas Nanowire Heterostructures on Si Substrate

Self-catalyzed Molecular Beam Epitaxy Growth and Their Optoelectronic Properties of Vertical GaAs Nanowires on Si(111)

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.

Self-catalyzed growth of sub-25-nm-diameter InAs nanowire arrays on Si patterned substrate

Growth of Defect-Free InAs Nanowires Using Pd Catalyst

Morphology and Microstructure of Inas Nanowires on Gaas Substrates Grown by Molecular Beam Epitaxy

Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates