Abstract:Topology and superconductivity, two distinct phenomena offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies if system can be found where they coexist. Tin (Sn) plays a pivotal role here as an element due to its two structural phases, $\alpha$-Sn and $\beta$-Sn, exhibiting topological characteristics ($\alpha$-Sn) and superconductivity ($\beta$-Sn). In this study we show how precise control of $\alpha$ and $\beta$ phases of Sn thin films can be achieved by using molecular beam epitaxy grown buffer layers with systematic control over the lattice parameter. The resulting Sn films showed either $\beta$-Sn or $\alpha$-Sn phases as the lattice constant of the buffer layer was varied from 6.10 A to 6.48 A, covering the range between GaSb (closely matched to InAs) and InSb. The crystal structures of the $\alpha$- and $\beta$-Sn films were characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. The smooth and continuous surface morphology of the Sn films was validated using atomic force microscopy. The characteristics of $\alpha$- and $\beta$-Sn phases were further verified using electrical transport measurements by observing resistance drop near 3.7 K for superconductivity of the $\beta$-Sn phase and Shubnikov-de Haas oscillations for the $\alpha$-Sn phase. Density functional theory calculations showed that the stability of the Sn phases is highly dependent on lattice strain, with $\alpha$-Sn being more stable under tensile strain and $\beta$-Sn becoming favorable under compressive strain, which is in good agreement with experimental observations. Hence, this study sheds light on controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.

Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires

Phase Selection Enabled Formation of Abrupt Axial Heterojunctions in Branched Oxide Nanowires.

Epitaxial Pb on InAs nanowires

Sn/InAs Josephson Junctions on Selective Area Grown Nanowires with in Situ Shadowed Superconductor Evaporation

Sn/InAs Josephson junctions on selective area grown nanowires with in-situ shadowed superconductor evaporation

Gate-tunable Superconductivity in Hybrid InSb-Pb Nanowires

Epitaxy of Semiconductor-Superconductor nanowires

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

Sb-Induced Phase Control of Inassb Nanowires Grown by Molecular Beam Epitaxy

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

Gate-tunable superconductivity in hybrid InSb–Pb nanowires

Selective synthesis and superconductivity of In-Sn intermetallic nanowires sheathed in carbon nanotubes

Epitaxy of Advanced Nanowire Quantum Devices

Retraction Note: Epitaxy of Advanced Nanowire Quantum Devices

Selective Area Growth of PbTe Nanowire Networks on InP

Spectroscopic Visualization of Hard Quasi-1D Superconductivity Induced in Nanowires Deposited on a Quasi-2D Indium film

Epitaxial Indium on PbTe Nanowires for Quantum Devices

Electronic properties of InAs/EuS/Al hybrid nanowires

Controlling structural phases of Sn through lattice engineering

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

Synthesis and Superconductivity of In-doped SnTe Nanostructures