Abstract:Controlled formation of non-equilibrium crystal structures is one of the most important challenges in crystal growth. Catalytically grown nanowires are ideal systems for studying the fundamental physics of phase selection, and could lead to new electronic applications based on the engineering of crystal phases. Here we image gallium arsenide (GaAs) nanowires during growth as they switch between phases as a result of varying growth conditions. We find clear differences between the growth dynamics of the phases, including differences in interface morphology, step flow and catalyst geometry. We explain these differences, and the phase selection, using a model that relates the catalyst volume, the contact angle at the trijunction (the point at which solid, liquid and vapour meet) and the nucleation site of each new layer of GaAs. This model allows us to predict the conditions under which each phase should be observed, and use these predictions to design GaAs heterostructures. These results could apply to phase selection in other nanowire systems.

What problem does this paper attempt to address?

The core problem that this paper attempts to solve is **the understanding and control of the crystal phase selection mechanism**, especially during the growth process of nanowires. Specifically, the author focuses on how to control the transformation between two different crystal structures - zinc blende (ZB) and wurtzite (WZ) - of GaAs nanowires by adjusting growth conditions (such as V/III ratio, temperature, etc.). ### Main problems: 1. **Understanding the physical mechanism of crystal phase selection**: Traditional models usually emphasize the roles of factors such as supersaturation, catalyst geometry, and interface energy in phase selection. However, these models are often based on post - hoc observations and lack direct observation of dynamic processes. 2. **Achieving precise control of the crystal phase**: In order to design nanowire heterostructures with specific electronic properties (such as quantum dots), it is necessary to be able to precisely control the crystal phase of nanowires. This not only involves how to trigger phase transformation but also how to stabilize the newly generated phase. ### Research methods: - **In - situ transmission electron microscopy (in - situ TEM)**: By observing the dynamic changes of GaAs nanowires under different growth conditions in real - time, researchers can directly record the transformation process between ZB and WZ phases. - **Changing growth parameters**: By adjusting parameters such as precursor pressure (V/III ratio) and temperature, the research team observed the differences in the morphology of the nanowire/liquid - droplet interface in different phase states and the differences in step - flow behavior. ### Key findings: - **The droplet geometry is a key factor**: The study found that the ratio of the height to the diameter of the droplet (\( h/d \)) and its contact angle (\( \phi \)) determine the crystal phase of the nanowire. When the droplet volume increases, the contact angle increases, leading to the emergence of an edge - truncated surface, which promotes the formation of the ZB phase; conversely, it is conducive to the growth of the WZ phase. - **The influence of the edge - truncated surface on phase selection**: When there is an edge - truncated surface, new atomic layers tend to nucleate far from the three - phase junction, which reduces the nucleation barrier of the ZB phase; in the absence of a truncated surface, nucleation is more likely to occur at the three - phase junction, which is conducive to the formation of the WZ phase. ### Conclusion: Through direct observation of the growth process of GaAs nanowires, the author proposed a new model that links the droplet geometry and the interface morphology, explaining the selection mechanism of different crystal phases. This finding not only deepens the understanding of the crystal phase selection of nanowires but also provides theoretical guidance for the future design of nanowire heterostructures with specific functions. ### Formula summary: - **Free energy difference formula**: \[ \Delta E = c_1y + c_2y^2 \] where \( y \) is the length of the edge - truncated surface, and \( c_1 \) and \( c_2 \) represent the linear and quadratic term coefficients respectively. - **Expression for the linear term coefficient \( c_1 \)**: \[ c_1=-\gamma_{ev}\sin(\theta)+\gamma_{sl}\cos(\theta)+\gamma_{sv}\sin(\phi)-\gamma_{vl} \] Here, \( \gamma_{ev} \) is the energy of the liquid - solid interface at the edge - truncated surface, \( \gamma_{sl} \) is the liquid - solid interface energy on the main growth surface, \( \gamma_{sv} \) is the gas - solid interface energy on the sidewall, \( \gamma_{vl} \) is the gas - liquid interface energy, \( \theta \) is the angle of the truncated surface, and \( \phi \) is the droplet contact angle. Through these studies, the author provides a brand - new perspective for the selection of nanowire crystal phases and lays the foundation for further exploration of the phase selection mechanisms in other material systems.

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