Step-flow growth of III-V nanowire layers

D. Jacobsson,Carina B. Maliakkal,J. Johansson,Marcus Tornberg,Erik K. Mårtensson,R. Wallenberg,K. Dick,Axel R. Persson
2019-05-20
Abstract:Understanding the crystallization process in nanoscale systems is central to developing novel, atomically controlled materials to meet the demands of electronic and quantum technology applications. Semiconductor nanowire growth by the vapor-liquid-solid process is an important example of such a system, in which the ability to form materials with structure and composition not achievable in bulk is well-established. Here we use in-situ TEM imaging of GaAs nanowire growth to understand the processes that by which the growth dynamics are connected to the experimental parameters. We find that two sequential steps in the crystallization process - nucleation and layer growth - occur on similar time scales and are independently controlled by different growth species. Importantly, the layer growth process contributes significantly to the growth time for all conditions, and will play a major role in determining material properties. The results are understood by a theoretical simulation correlating the growth dynamics, liquid droplet and experimental parameters.
Physics,Engineering,Materials Science
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