Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Role of nitrogen source flow on the growth of 2D GaN crystals

Low-Temperature Growth of Two-Dimensional Layered Chalcogenide Crystals on Liquid.

Growth of 2D GaN Single Crystals on Liquid Metals

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures.

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Crystal Phase And Growth Orientation Dependence Of Gaas Nanowires On Nixgay Seeds Via Vapor-Solid-Solid Mechanism

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

GaN Single Crystals: Growth Mechanism and Temperature-Modulated Growth Using Li3N Flux

Model for Low-Temperature Growth of Gallium Nitride

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Effects of N_2 Carrier Gas Flow and System Temperature on the Quality of GaN Film

Roles of V/III ratio and mixture degree in GaN growth: CFD and MD simulation study

Template Approach to Crystalline GaN Nanosheets

Synthesis, Optical Properties and Growth Mechanism of Leaf-Like GaN Crystal

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

Growth and Characterization of GaAsN Bulk Layer and (in)gaasn Quantum-Well Structures

The Chemistry of GaN Growth

Vapor Growth of III Nitrides

Vapor–liquid–solid growth of highly stoichiometric gallium phosphide nanowires on silicon: restoration of chemical balance, congruent sublimation and maximization of band-edge emission