Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Growth of Freestanding Gallium Nitride (gan) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

High Quality Self-Separated GaN Crystal Grown on a Novel Nanoporous Template by HVPE

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux

Growth of High-Quality GaN Crystals on a BCN Nanosheet-Coated Substrate by Hydride Vapor Phase Epitaxy

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X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Properties of GaN film grown by hydride vapor phase epitaxy

Highly Uniform Growth of 2-Inch GaN Wafers with a Multi-Wafer HVPE System

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Study on the Stress and Mechanism of Self-Separated GaN Grown by Na-flux Method

Bulk GaN Growth by Ga Sublimation and Vapor Transport Technique

The Influence of V/III Ratio on GaN Grown on Patterned Sapphire Substrate with Low Temperature AlN Buffer Layer by Hydride Vapor Phase Epitaxy

Thick GaN Layer Grown by Ga Vapor Transport Technique