Abstract:Free-standing GaN substrates are urgently needed to fabricate high-power GaN-based devices. In this study, 2-inch free-standing GaN substrates with a thickness of ~250 μm were successfully fabricated on double-polished sapphire substrates, by taking advantage of a combined buffer layer using hydride vapor phase epitaxy (HVPE) and the laser lift-off technique. Such combined buffer layer intentionally introduced a thin AlN layer, using a mix of physical and chemical vapor deposition at a relatively low temperature, a 3-dimensional GaN interlayer grown under excess ambient H2, and a coalescent GaN layer. It was found that the cracks in the epitaxial GaN layer could be effectively suppressed due to the large size and orderly orientation of the AlN nucleus caused by pre-annealing treatment. With the addition of a 3D GaN interlayer, the crystal quality of the GaN epitaxial films was further improved. The 250-μm thick GaN film showed an improved crystalline quality. The full width at half-maximums for GaN (002) and GaN (102), respectively dropped from 245 and 412 to 123 and 151 arcsec, relative to those without the 3D GaN interlayer. The underlying mechanisms for the improvement of crystal quality were assessed. This method may provide a practical route for fabricating free-standing GaN substrates at low cost with HVPE.

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Synthesis And Properties Of Hvpe Nitride Substrates

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE

Preparation of large area freestanding GaN by laser lift-off technology

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

A simple method for the growth of high-quality GaN nanobelts

Critical Thickness of GaN Film in Controllable Stress-Induced Self-Separation for Preparing Native GaN Substrates

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy