Abstract:The liquid epitaxial growth process on the HVPE-GaN seed of GaN crystal was investigated using the Na–Li–Ca flux method. The phase structure and morphology of as-grown GaN crystals were characterized by X-ray diffraction (XRD) and the scanning electron microscope (SEM), respectively. Under the growth time of 70h, a large area of dissolution morphology could be observed accompanied by a decrease in the thickness of the HVPE-GaN seed. At the bottom of the crucible, the thinning of the seed crystal thickness was the most obvious. For the growth time of 150h, there were two kinds of appearances along the height direction, presenting gathered ridges in the upper part and cellular organizations in the middle and bottom parts. For 420h, the as-grown crystal presented a typical hexagonal layered morphology and the side face developed outward forming regular hexagonal crystallographic planes. With prolonging time from 150h to 420h, the LPE growth shifted from non-equilibrium growth mode with an unstable cellular growth surface morphology to near-equilibrium growth mode with a typical hexagonal layered growth morphology. The thickness of as-grown crystal showed a decrease trend from the gas-liquid interface to the bottom of crucible. To get near-equilibrium growth mode for the whole crystal plate in Na-flux method, the promotion of N dissolving, GaN growth unit diffusion is the key issue.

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Synthesis And Properties Of Hvpe Nitride Substrates

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE*

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Study on the Stress and Mechanism of Self-Separated GaN Grown by Na-flux Method

Direct Growth of Wafer-Scale Self-Separated GaN on Reusable 2D Material Substrates

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE

Cross-stacked carbon nanotubes assisted self-separation of free-standing GaN substrates by hydride vapor phase epitaxy

Realization of Wafer-Scale Single-Crystalline GaN Film on CMOS-compatible Si(100) Substrate by Ion-Cutting Technique

Facet Growth of Self-Separated Gan Layers Through Hvpe on Large Square-Patterned Template

Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Thick GaN Layer Grown by Ga Vapor Transport Technique

A Study on the Growth Process for Liquid Phase Epitaxy of GaN Crystal Using Na–Li–Ca Flux