Abstract:In this review, the structural, mechanical, thermal, and chemical properties of substrates used for gallium nitride (GaN) epitaxy are compiled, and the properties of GaN films deposited on these substrates are reviewed. Among semiconductors, GaN is unique; most of its applications uses thin GaN films deposited on foreign substrates (materials other than GaN); that is, heteroepitaxial thin films. As a consequence of heteroepitaxy, the quality of the GaN films is very dependent on the properties of the substrate—both the inherent properties such as lattice constants and thermal expansion coefficients, and process induced properties such as surface roughness, step height and terrace width, and wetting behavior.The consequences of heteroepitaxy are discussed, including the crystallographic orientation and polarity, surface morphology, and inherent and thermally induced stress in the GaN films. Defects such as threading dislocations, inversion domains, and the unintentional incorporation of impurities into the epitaxial GaN layer resulting from heteroepitaxy are presented along with their effect on device processing and performance. A summary of the structure and lattice constants for many semiconductors, metals, metal nitrides, and oxides used or considered for GaN epitaxy is presented.The properties, synthesis, advantages and disadvantages of the six most commonly employed substrates (sapphire, 6H-SiC, Si, GaAs, LiGaO2, and AlN) are presented. Useful substrate properties such as lattice constants, defect densities, elastic moduli, thermal expansion coefficients, thermal conductivities, etching characteristics, and reactivities under deposition conditions are presented. Efforts to reduce the defect densities and to optimize the electrical and optical properties of the GaN epitaxial film by substrate etching, nitridation, and slight misorientation from the (0001) crystal plane are reviewed. The requirements, the obstacles, and the results to date to produce zincblende GaN on 3C-SiC/Si(001) and GaAs are discussed. Tables summarizing measures of the GaN quality such as XRD rocking curve FWHM, photoluminescence peak position and FWHM, and electron mobilities for GaN epitaxial layers produced by MOCVD, MBE, and HVPE for each substrate are given. The initial results using GaN substrates, prepared as bulk crystals and as free-standing epitaxial films, are reviewed. Finally, the promise and the directions of research on new potential substrates, such as compliant and porous substrates are described.

Synthesis And Properties Of Hvpe Nitride Substrates

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Properties of GaN film grown by hydride vapor phase epitaxy

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE

Self-separation of Two-Inch-diameter Freestanding GaN by Hydride Vapor Phase Epitaxy and Heat Treatment of Sapphire

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Substrates for gallium nitride epitaxy

Preparation of freestanding GaN wafer by hydride vapor phase epitaxy on porous silicon

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Preparation of Controllable Double-Selective Etched Porous Substrate for HVPE Growth of GaN Crystals with Excellent Optical Properties

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate