Abstract:Si-doped GaN was grown by MOCVD method using a home-made vertical reactor operating at atmospheric pressure. To prevent parasitic reactions in the gas phase, reagents were mixed at 20mm before reaching the substrate. The growth was carried out on (0001 ) oriented sapphire substrates using Trimethylgallium(TMGa) and blue-ammonia(NHs) as Ga and N sources, respectively. The doping reagents was the diluted silane(SiH4). The mixed gases of hydrogen and nitrogen were used as the carrier gases. A thin buffer layer with thickness of about 15um was grown at 520℃ and recrystallized at 1 060℃for 6 minutes. The Sidoped GaN films were grown at 1 060℃with the [ V ]/[ Ⅲ] ratio of 1 000: 1 The growth time was an hour with the growth rate in the rage of 1. 8 - 4. 0 um/h. The photoluminescence (PL ), the Van der Pauw Hall method, and the double-crystal X-ray diffraction(DXRD) were used to measure the optical, electrical, and structural data of these films at room temperature. Table 1 is the characterization data of the Si-doped GaN films. Fig. 1 shows the electron carrier concentration and mobility of Si-doped GaN as a function of SiH4/ TMGa ratio. The carrier concentration varies between 1 ×1017 and 4 ×1019cm - 3. The relationship between the carrier concentration and the flow rate ratio of SiH4/TMGa is approximately linear. Fig. 2 shows the photoluminescence (PL) spectra of Si-doped GaN as a function of the SiH4/TMGa ratio at 300K. The excitation-source was a 15mW He-Cd laser. The band-edge emission and deep-level emission were observed around 370um and 550um, respectively. Very strong band-edge emission without yellow band(limited by the apparatus)was observed in Fig. 2-D. Fig.3 shows the intensity of band-edge emission, the intensity ratio between band-edge emission and deep-level emission as a function of the carrier concentration of Si-doped GaN films. The intensity of bandedge emission was highly enhanced and the intensity of yellow emission was restrained with the increasing ofcarrier concentration. As shown in Fig. 3, Si-doped GaN films, with carrier concentration of 2 ×1019cm-3 were obtained. For this kind of film, the intensity of band edge emission is as high as one hundred times of that of unintentional doped GaN and no yellow luminescence can be found. Fig.4 shows the relationships between the SiH4/TMGa ratio and the FWHM of double-crystal x-ray diffraction (DXRD ) and the growth rate of Si- doped GaN films. The FWHM of DXRD of GaN films became wider when SiH4/TMGa ratio increased. However, the growth rate decreased from 4 um/h to 1 .7um/h with increasing SiH4/TMGa ratio. This phenomenon has not been reported to our knowledge. In this paper, Si-doped GaN films with carrier concentration of 2 ×1019 cm-3, electron mobility of 120.m2/V.s can be obtained. FOr this kind of film, FWHM of the band edge emission at room temperature is only 60meV, and no yellow emission can be observed. In this work, the optimum flow ratio of SiH4/TMGa was 2 ×10 -4.

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

An investigation on the epitaxial growth of GaN film on Si(111) substrate

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Epitaxial growth of GaN film on Si substrate

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

Secondary Ion Mass Spectroscopy and Photoluminescence Investigations on the Gan Epilayer Grown on Si Substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Synthesis and Characterization of the GaN Film

GaN:Si Single Crystal Films Grown on Sapphire Substrates by MOCVD

SIMS and XPS studies of GaN epilayers grown on Si substrates

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering