Abstract:The deposition and crystallization of amorphous GaN buffer layers on Si(111) is firstly investigated by using an atomic force microscope (AFM), X-ray diffraction (XRD) and a high-resolution transmission electron microscope (HRTEM). The amorphous GaN layers were deposited by MOCVD at 300°C. The islanding process by annealing at higher temperatures has been revealed by AFM. It is found that the amorphous layers begin to be crystallized by solid-phase epitaxy at 500°C in MOCVD, and the full-developed islands formed at about 600°C. XRD data show that the GaN peak appeared only after an annealing at higher temperatures. Cross-sectional HRTEM micrographs of the buffer region of the samples with amorphous GaN buffer layers reveal that many domains exist in the GaN buffer layers and these domains misorientate each other with a small angle. The boundaries between domains locate near the bunched steps, and, the films on a terrace between steps have the same crystal orientation. The amorphous buffer layer deposited at 300°C and the buffer layer directly deposited at 550°C are used in the growth of GaN epilayers, respectively. The XRD results and photoluminescence at room temperature of such GaN epilayers show that using the amorphous GaN buffer layer lead to monocrystalline and a narrower full-width at half-maximum (FWHM) of near band emission (16nm) than using the buffer layer directly deposited at 550°C (FWHM of 21nm). These results indicate that the quality of GaN epilayer on Si(111) can be improved by using the amorphous GaN buffer layer.

Comparison of GaN epitaxial films on silicon nitride buffer and Si(111)

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

GaN Growth with Low-Temperature GaN Buffer Layers Directly on Si(111) by Hydride Vapour Phase Epitaxy

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Deposition and Crystallization of Amorphous Gan Buffer Layers on Si(111)Substrates

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Growth of GaN on Si(111) by inserting δAl/AlN buffer layer

Synthesis and Characterization of the GaN Film

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Molecular Beam Epitaxial Growth of GaN on 3C-Sic/si(111) Substrates Using a Thick AlN Buffer Layer

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Comparison of the Properties of GaN Grown on Complex Si-based Structures

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)