Abstract:GaN is a very important semiconductor with a wide direct bandgap (3.39 eV), and has strong light emission in blue and UV regions. It has found extensive commercial applications in lasers and light-emitting diodes. Recently Si substrate is regarded as one of most promising substrates for GaN epitaxial growth due to its high quality, low cost, extensively existing in electronic industry and so on. However, it is very difficult to grow high quality GaN epitaxial layer due to great difference in lattice constant and thermal expansion coefficient.In our experiment, GaN film composed of crystalline microsheets was synthesized on Si(111) substrate by chemical vapor deposition, employing Ga2O3 and NH3 as Ga and N sources respectively. No buffer layer was used. The as-grown product was tested and characterized using SEM, EDS, XRD, TEM and PL. The results show that the as-grown product is a high quality GaN film which is composed of crystalline microsheets with less defects. The size of crystalline microsheets is hundreds of nanometers and the thickness in the range of tens of nanometers. GaN film integrates tightly with Si substrate, the surface of which is flat, compact and no cracks. A strong band-edge emission peak at 367 nm(3.378 eV) is observed. The growth mechanism is discussed briefly.

An investigation on the epitaxial growth of GaN film on Si(111) substrate

Structural and Photoluminescence Characterization of GaN Film Grown on Si (111) Substrate

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Epitaxial growth of GaN film on Si substrate

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Temperature-dependent Photoluminescence Spectra of GaN Epitaxial Layer Grown on Si (111) Substrate

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Wurtzite GaN Epitaxial Growth on Si(111) Using Silicon Nitride As an Initial Layer

Synthesis and Characterization of the GaN Film

Growth and Characterization of GaN Films on Si(111) Substrate Using High-Temperature AlN Buffer Layer

Investigation of GaN Growth Directly on Si (001)by ECR Plasma Enhanced MOCVD

Preparation and Properties of GaN Films on Si(111) Substrates

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Investigation of GaN films grown on Si substrates by hot-wall chemical vapor deposition

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Atomistic Study of GaN Surface Grown on Si(111)

Growth of AlGaN Film on Si (111) Substrate