Abstract:Summary form only given. Recently, the market for short wavelength laser diodes attracts many groups to focus on growing the GaN system material. However growing of GaN on GaAs substrates and processing of the devices concerned have to be carried out under the low temperature conditions of less than 800/spl deg/ C. So it's necessary to provide a highly activated nitrogen source for PA-MOCVD. By use of a homemade cavity-coupling ECR plasma generator-MEP to deliver activated nitrogens, excellent cubic GaN epilayers have been grown on [001]GaAs under low temperature(/spl sim/600 degree) and low pressure (/spl sim/1 Pa) by ECR-PAMOCVD. The experiment results showed that the initial nitridation of GaAs substrates and the growth of buffer layer are very important for the combination of the interface and the crystal quality of GaN. So one of the most important growth parameters is the chemical species in the nitrogen plasma,especially nitrogen radicals. The optical emission spectra of nitrogen plasma in MEP were investigated as functions of the operating pressure Po (or N/sub 2/ gas flow rate) and microwave power Pw. It was found that the quantity of nitrogen radicals were increased with Po and Pw, and the MEP plasma generator was a good candidate for growing cubic GaN.

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

Heteroepitaxy of GaN by using an ionized N source

GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

Gallium Nitride Films Synthesized by Reactive Pulsed Laser Deposition from A Gaas Target

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

The Investigation of Molecular Beam Epitaxy Growth of GaN by Molecular Dynamics Simulation

MBE growth and X-ray study of high-quality cubic-GaN on GaAs(001)

Plasma Assisted Molecular Beam Epitaxial Growth of GaN with Low Growth Rates and Their Properties

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Activated nitrogens in ECR-plasma and its effects on growth of cubic GaN

An investigation on the epitaxial growth of GaN film on Si(111) substrate

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

Nitridation of GaAs(001) Using N2-RF Plasma