Abstract:Gallium nitride (GaN) films homo-epitaxially grown on GaN/sapphire templates and free standing GaN substrates by plasma-assisted molecular beam epitaxy (PA-MBE) have been investigated. After optimizations of growth temperature, the Ga/N flux ratio, surface preparation as well as initial growth process, the high quality MBE-GaN films were obtained. Combined with X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements, the TD densities were measured similar to 4.2 x 10(8) cm(-2) and similar to 5 x 10(5) cm(-2) for MBE-grown GaN films grown on GaN/sapphire templates and free standing GaN substrates, respectively. The observations of TEM prove the clear interface and well-arranged atomic lattice between substrates and as-grown layers. Besides, a flat and smooth surface with step-flow growth mode is observed by atomic force microscopy (AFM). Photoluminescence (PL) measurements exhibit that the linewidth for free excitons is as narrow as 4 meV at low temperature of 8K and the deep level related yellow band emission similar to 550 nm have been effectively suppressed at room temperature. The process optimization and obtained results give us wide latitude to fabricate high performance devices with lower tolerance to dislocation density.

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy

Heteroepitaxial Growth of Cubic Gan on GaAs(100) by Reactive Nitrogen Source

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

Cubic Mgxzn1-Xo Films Grown on Si(111)

Molecular-beam-epitaxy growth of GaN on GaAs ( lOO ) by using reactive nitrogen source 2

Mocvd Growth and Characterization of Epitaxial Alxga1-Xn Films

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

MOLECULAR BEAM EPITAXIAL GROWTH AND STRUCTURE OF COBALT FILM ON GaAs(001) SURFACE

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0001) substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Comparison of surface morphologies in GaN films grown by rf-MBE and MOCVD on vicinal sapphire (0 0 0 1) substrates

GaN MOCVD Growth on ZnAl2O4/α-Al2O3 Substrates

Heteroepitaxy of GaN by using an ionized N source

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films