Abstract:The direct epitaxial growth of GaAs on Si suffers from their nature of lattice mismatch, thermal mismatch and polarity difference induced anti-phase domains (APDs). Here, we report the high quality and thin GaAs film grown on {113}-faceted Ge/Si (001) hollow substrate by in-situ hybrid molecular beam epitaxy. By directly growth of Ge on U-shape patterned Si (001), a strain-relaxed high-quality Ge sawtooth hollow structure with {113} facets was obtained. With an additional 400 nm GaAs deposition, an APD-free surface with a root-mean-square roughness of merely 0.67 nm is obtained on such Ge {113} /Si (001) substrate. The lattice mismatch dislocation between Ge and Si is found to terminate mostly at the sidewalls of the hollow structures. The {113}-faceted Ge surface is acting as an equivalent to the miscut substrate, which annihilates the APDs at the GaAs/Ge interface. High-resolution X-ray diffraction characterization reveals that the hollow structures can effectively reduce the thermal strain, leading to a crack-free GaAs film up to 7 µm. Five-layer InAs/GaAs quantum dots (QDs) on such virtual GaAs/Ge {113} /Si (001) substrate without any dislocation filter layers exhibits almost the same photoluminescence (PL) intensity as that on the GaAs substrate, providing a promising method for integrating III-V QD lasers with silicon photonic platform.

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Study on the growth of GaAs layer and InAs quantum dots on Ge substrate by molecular beam epitaxy

Influence of Growth Temperatures on the Quality of InGaAs/GaAs Quantum Well Structure Grown on Ge Substrate by Molecular Beam Epitaxy

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Growth of AlGaAs on GaAs (110) Surface by Molecular Beam Epitaxy

Molecular beam epitaxy of GaAs on nearly lattice-matched SiGe substrates grown by the multicomponent zone-melting method

Surface chemistry and growth mechanisms studies of homo epitaxial (1 0 0) GaAs by laser molecular beam epitaxy

Surface Chemistry and Growth Mechanisms Studies of Homo Epitaxial (100) Gaas by Laser Molecular Beam Epitaxy

Heteroepitaxy Growth of GaAsBi on Ge(100) Substrate by Gas Source Molecular Beam Epitaxy

Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Extremely High Uniformity of Interfaces in Gaas/Algaas Quantum-Wells Grown on (411)A Gaas Substrates by Molecular-Beam Epitaxy

Selective epitaxial growth of GaAs on Ge by MOCVD

Nanoscale Growth of Gaas on Patterned Si(111) Substrates by Molecular Beam Epitaxy

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Achieving High-Quality In0.3ga0.7as Films on Gaas Substrates by Low-Temperature Molecular Beam Epitaxy