Abstract:We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defective crystals in the heteroepitaxial growth of nitrides, and the high mobility graphene film can readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. The process consists in first growing a 5-8 graphene layers film on the C-face of 4H- SiC by confinement-controlled sublimation of silicon carbide. The graphene film is then patterned and arrays of 75-nanometer-wide openings are etched in graphene revealing the SiC substrate. 30-nanometer-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in openings patterned through graphene, with no nucleation on graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal hexagonal wurtzite. The GaN crystalline nanomesas have no threading dislocations, and do not show any V-pit. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene / silicon carbide platform.

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Selective epitaxial growth of GaAs on Ge by MOCVD

Selective area epitaxy of GaAs films using patterned graphene on Ge

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Selectively Grown Gaas Nanodisks on Si(100) by Molecular Beam Epitaxy

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Heteroepitaxy of Ge on Si(001) with Pits and Windows Transferred from Free-Standing Porous Alumina Mask

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics

Effects of Annealing and Substrate Orientation on Epitaxial Growth of GaAs on Si

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Growth and Characterization of Silicon Molecular Beam Epilayers on GaP (111) Substrates

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions