Abstract:Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators. A cost-effective technology for the heteroepitaxial growth of Ge on Si will be highly beneficial. In this work, a simplified chemical vapor deposition reactor was assembled in-house to deposit Ge films. Epitaxial Ge film growth on Si (100) substrates was accomplished without requiring ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby minimizing the economic and thermal budget of the process. Films were deposited using digermane (Ge2H6) precursor in a single step at a process temperature of 350 °C and chamber pressures of 1–10 Torr. Films were achieved at high chamber background pressures (>10−6 Torr) by implementing a thorough ex situ substrate cleaning process and optimizing times for wafer loading, chamber pumping and initiation of film deposition. Transmission electron microscopy and X-ray diffraction were used to confirm the epitaxial growth and crystalline quality of the obtained films. Optical properties of the films were characterized using Raman spectroscopy, Photoluminescence and Infra-red spectroscopy.

Heteroepitaxy of Ge on Si(001) with Pits and Windows Transferred from Free-Standing Porous Alumina Mask

Selective epitaxial growth of Ge nanodots with ultra-thin porous alumina membrane

Electrochemical Pore Etching in N- and P-Type Ge

Study of Si and Ge growth on Si(100) surface

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Restrictions of Si-based Ge nanodots from porous alumina membranes

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

The Influence of the Edge Effect of the Mask on the Strain and the Morphology of SiGe Film Grown at the Patterned Si Substrate by Molecular Beam Epitaxy

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Selective area epitaxy of GaAs films using patterned graphene on Ge

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Epitaxial Growth and Transfer of Single Crystalline Si Thin Films on Double Layered Porous Silicon Substrate