Abstract:Germanium on silicon has the potential to enable growth of high quality group IV semiconductors for the field of silicon photonics by being used as virtual buffers. In addition Ge layers can be used in the fabrication of passive components such as waveguides and resonators. A cost-effective technology for the heteroepitaxial growth of Ge on Si will be highly beneficial. In this work, a simplified chemical vapor deposition reactor was assembled in-house to deposit Ge films. Epitaxial Ge film growth on Si (100) substrates was accomplished without requiring ultra-high vacuum conditions or a high temperature substrate pre-deposition bake thereby minimizing the economic and thermal budget of the process. Films were deposited using digermane (Ge2H6) precursor in a single step at a process temperature of 350 °C and chamber pressures of 1–10 Torr. Films were achieved at high chamber background pressures (>10−6 Torr) by implementing a thorough ex situ substrate cleaning process and optimizing times for wafer loading, chamber pumping and initiation of film deposition. Transmission electron microscopy and X-ray diffraction were used to confirm the epitaxial growth and crystalline quality of the obtained films. Optical properties of the films were characterized using Raman spectroscopy, Photoluminescence and Infra-red spectroscopy.

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Study of Si and Ge growth on Si(100) surface

Epitaxial growth of high-quality Ge layers on Si with Ge2H6 under UHV-CVD conditions

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

The Influence of the Edge Effect of the Mask on the Strain and the Morphology of SiGe Film Grown at the Patterned Si Substrate by Molecular Beam Epitaxy

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Homoepitaxy of Ge on Ozone-Treated Ge (1 0 0) Substrate by Ultra-High Vacuum Chemical Vapor Deposition

Molecular-Beam Epitaxy of Gaas on Si-On-Insulator

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

Growth of Ge quantum dots on SiO2/Si(111) surface

Molecular Dynamics Study on Sputtering Growth of Ge/Si(100)2×1 Film

Selective Area Growth of Ge Film on Si

Heteroepitaxy of Ge on Si(001) with Pits and Windows Transferred from Free-Standing Porous Alumina Mask

High-quality Ge film grown on Si substrate and its thermodynamic mechanism

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Epitaxial growth of Si(111)/Er2O3 (111) structure on Si(111) by molecular beam epitaxy

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Growth of Ge films by cluster beam deposition