Abstract:We present scanning tunneling microscopy observations of the reaction of cobalt with Si(111)-(7×7). For deposition at 320 °C (reactive epitaxy), flat-topped monolayer islands of triangular shape with vertices along 〈1̄1̄2〉Si nucleate on the faulted side of the 7×7 structure then grow in size attaining edge lengths that are quantized to integer multiples of the 7×7 unit cell. A 2×2 reconstruction with large corrugation occurs on some of the islands, and is believed to be an ordered array of silicon adatoms. The shape and orientation of the islands appears to be determined by energetics, not growth kinetics. They coexist with the 7×7 structure, implying that metal atoms readily diffuse through the silicon matrix before attaching to an existing island. From the areal density of islands we estimate an activation energy for ‘‘surface diffusion’’ of 0.8 eV, and argue that the process involves metal atom transport through near-surface silicon interstitials. At lower temperatures, no ordered silicide forms, while at higher temperatures, multilayer islands form with a predominant layer spacing of 3.1 Å suggesting that they are (111)CoSi2. For postdeposition annealing at 600 °C (solid phase epitaxy), large, multilayer islands of CoSi2 form, in coexistence with a √7 submonolayer phase. General aspects of the nucleation, growth, and coarsening in this reactive, epitaxial system are discussed.

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Study of Si and Ge growth on Si(100) surface

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Influences of the Si(113) anisotropy on Ge nanowire formation and related island shape transition

Nanoscale Growth of a Sn-guided SiGeSn Alloy on Si (111) Substrates by Molecular Beam Epitaxy

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Scanning Tunneling Microscopy Studies of Nucleation and Growth in a Reactive, Epitaxial System: Co/Si(111)

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Atomic Structures of the Ge/Si(113)-(2 X 2) Surface.

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Atomic Structures Of The Ge/Si(113)-(2x2) Surface

Toward a Detailed Understanding of Si(111)-7×7Surface and Adsorbed Ge Nanostructures: Fabrications, Structures, and Calculations

A two-stage molecular beam epitaxial growth method to fabricate small and uniform Ge quantum dots on Si(100)

Nucleation and Growth of Ge Nanoclusters on the Si(111)-(7 × 7) Surface Studied by Scanning Tunneling Microscopy