Abstract:Silicon-based semiconductor quantum dot quantum computing coding with spin is compatible with traditional microelectronic processes, easy to expand, and can be isotope purified to improve the decoherence time, so it has attracted much attention. There are fewer reports on the work related to undoped Si/SiGe heterostructures grown by molecular beam epitaxy compared with chemical vapor deposition. An undoped Si/SiGe heterostructure has been grown by molecular beam epitaxy. The scanning transmission electron microscopy and energy-dispersive spectroscopy mapping results show an atomic-scale interface with a characteristic length of 0.53 nm. The surface root-mean-square roughness measured by atomic force microscope is 0.44 nm. The X-ray diffraction data show that the Si quantum well is fully strained and the in-plane strain is 1.03%. In addition, the performance of the two-dimensional electron gas was evaluated by low-temperature Hall measurements, which were conducted in the Hall-bar shaped field-effect transistor. It shows a peak mobility of 20.21×10 4 cm 2 ·V -1 ·s -1 when the carrier density is about 6.265×1011 cm-2 at 250 mK. The percolation density is 1.465×10 11 cm -2 . The effective mass of the two-dimensional electron gas is approximately 0.19 m 0 . The power exponential relationship (1.026) between carrier density and mobility at different gate voltages, along with the Dingle ratio (7-12) of the two-dimensional electron gas, indicates that the electrons are scattered by background impurities and semiconductor/oxide interfaces charges. The atomically sharp interface of Si/SiGe heterostructures created by molecular beam epitaxy is beneficial for researching the valley physics properties in silicon. The structural and transport characterizations in this paper lay the foundation for the optimization of Si-based semiconductor quantum dot quantum computing materials.

Study on silicon molecular beam epitaxial layer morphology by scanning tunneling microscopy

Study of Si and Ge growth on Si(100) surface

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Ge Molecular Beam Epitaxy on Si(113): Surface Structures, Nanowires and Nanodots

Quantitative Analysis of Si/Ge Quantum Structures by High-Resolution Transmission Electron Microscopy

Surface Morphology During Multilayer Epitaxial Growth of Ge(001).

Modified Stranski-Krastanow Mode for Ge Island Growth on (001) Si at High Temperature

Molecular beam epitaxy growth of Ge on Si(111) substrates covered by a SiO2 mask

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Heteroepitaxial Growth of Ge Films on Si Substrates by Molecular-Beam Epitaxy

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

Ge Deposited at Different Substrate Temperatures and Its Impact on SiC Films Growth

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Quantitative Strain Characterization of SiGe Heterostructures by High-Resolution Transmission Electron Microscopy

Study of growth technique and characterization of SiGe single crystalline grown on Si(111) substrate by liquid phase epitaxy

Epitaxy and characterization of undoped Si/SiGe heterojunctions

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy

Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide

Molecular Dynamics Study on Sputtering Growth of Ge/Si(100)2×1 Film

Scanning Tunneling Microscopy Of The Si(111)-7x7 Surface And Adsorbed Ge Nanostructures