Abstract:AbstractStrained layer semiconductor structures provide possibilites for novel electronic devices. When a semiconductor layer is deposited epitaxially onto a single crystal substrate with the same structure but a slightly different lattice parameter, the semiconductor layer grows pseudomorphically with a misfit strain that can be accomodated elastically below a critical thickness. When the critical thickness is exceeded, the elastic strain energy builds up to a point where it becomes energetically favorable to form misfit dislocations. In the absence of a capping layer, surface roughening may also take place which causes strain relaxation in the form of 2D ridges or islands via surface diffusion. At sharp valley regions on the surface, amplified local stresses can cause further defect nucleation and propagation. These defects can be detrimental to the electrical performance of devices by acting as electron-hole recombination centers or current leakage channels. In this paper, we present observations and analyses of two novel defects nucleated in heteroepitaxial Si1−xGex thin films through surface roughening. Heteroepitaxial films 500 Å thick and containing 22% Ge are deposited by LPCVD. These initially flat films are subjected to various annealing conditions in a H2 atmosphere to induce morphological evolution and defect formation. High resolution transmission electron microscopy and atomic force microscopy have been used to study the morphology of defects at the film surface and at the film/substrate interface.

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Study of Si and Ge growth on Si(100) surface

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strain-induced abnormal Ge/Si inter-diffusion during hetero-epitaxy process

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Strain Field Mapping of Dislocations in a Ge/Si Heterostructure.

Critical Ge concentration for 2×n reconstruction appearing on GeSi covered Si(100)

Electronic structure of the Ge/Si(105) hetero-interface

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Structure transition of Ge/Si(113) surfaces during Ge epitaxial growth

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing

Structure transition of Ge/Si(1 1 3) surfaces during Ge epitaxial growth

Multitechnique characterization of sandwiched Si/SiGe/Si heterostructures

The Influence of the Edge Effect of the Mask on the Strain and the Morphology of SiGe Film Grown at the Patterned Si Substrate by Molecular Beam Epitaxy