Abstract:Surface roughening associated with strain relaxation of Si1-xGex films grown epitaxially on (100) Si substrates has been investigated using transmission electron microscopy, atomic force microscopy and x-ray diffraction. Epitaxial films 100 Å in thickness and containing 18% Ge, which are subcritical with respect to the formation of misfit dislocations, show strain relaxation through surface roughening on annealing at 700 °C. Enhanced surface grooves aligned along <100> directions are observed in films annealed at 850 °C. Strain relaxation as measured by x-ray diffraction is significantly greater at the higher temperature. Prolonged anneals at 850 °C also result in islanding. The surface roughening processes have also been studied in subcritical films with 15% Ge at 900 °C. These films also show enhanced grooving aligned along <100> directions. These observations are consistent with an anisotropic elastic analysis which indicates that grooving should occur preferentially along <100> directions. Intermixing effects in these samples have also been investigated through depth profiling using Auger Electron Spectroscopy. In addition to the above subcritical films, other films with 18% and 22% Ge and supercritical thicknesses have also been studied. For these films, surface grooving is observed along <110> directions, which suggests that these grooves are related to the formation of misfit dislocation networks. The role of these surface roughening processes in the nucleation of dislocations has also been explored.

Direct in situ characterization of Ge surface segregation in strained Si1−xGex epitaxial thin films

Modeling of Ge surface segregation in vapor-phase deposited Si1−xGex thin films

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Surface segregation and content variation in Si1-xGex growth on Si in ultrahigh vacuum by CVD

Study of Si and Ge growth on Si(100) surface

Ge Segregation in Si1- x Gex Alloy Grown on Si by UHV/CVD

The Structure of GexSi1−x/Si Strained Layer Superlattices and Heterostructures

Strain Relaxation in Heteroepitaxial Si1-xGex Films via Surface Roughening Processes

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Investigation of Strain-Relaxed SiGe Thin Film Grown on Ion-Implanted Si Compliant Substrate

RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; a two-site exchange model with growth rate dependence

Local Structures of Si/Gen/Si(001) Hetero-Structure Films Studied by Grazing Incidence Fluorescence X-ray Absorption Fine Structure

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Study of Ge Thin Heterostructures by Synchrotron Radiation X-Ray Reflection

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Raman-Scattering Spectroscopy of Gesi/Si Strained-Layer Superlattice

Strain study of partially relaxed Ge epilayers on Si (100) substrate

Strain Relaxation and Misfit Dislocation in SiGe Epilayers Grown in Micron Size Windows by MBE

Strains in Si Substrate Induced by Formation of Ge Islands

Strain Relaxation and Defect Formation in Heteroepitaxial Si1−xGex Films Via Surface Roughening Induced by Controlled Annealing Experiments