Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

蒋良俊,叶志镇,黄靖云
DOI: https://doi.org/10.3969/j.issn.1671-4776.2001.03.013
2001-01-01
Abstract:Many experimental results concerning Ge segreation in Si 1-x Ge x expitaxial thin films have been reported recently,especially the Ge enrichment in the surface or subsurface layer.In this paper,we demonstrate that a simple model based on the regular solution theory can explain the Ge enrichment in the surface or subsurface.The model using the Monte Carlo method can show excellent agreement with the experimental data.
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