Segregations and desorptions of Ge atoms in nanocomposite Si1−xGex films during high-temperature annealing
Yu Wang,Meng Yang,Gang Wang,Xiao-Xu Wei,Jun-Zhuan Wang,Yun Li,Ze-Wen Zou,You-Dou Zheng,Yi Shi
DOI: https://doi.org/10.1088/1674-1056/26/12/126801
2017-01-01
Chinese Physics B
Abstract:Nanocomposite Si1-xGex films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature (T-a) is 900 degrees C, the nanocomposite Si1-xGex films are well crystallized, and nanocrystals (NCs) with the core-shell structure form in the films. After being annealed at 1000 degrees C (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.