Abstract:The formation of NiSi1−xGex on Si1−xGex(111) substrates with x=0, 0.05, and 0.20 at an annealing temperature of 500°C has been studied by x-ray diffraction, transmission electron microscopy, and pole-figure measurements. NiSi formed preferentially oriented on Si, with (100), (001), and (102) parallel to Si(111) and NiSi[010]‖Si⟨211⟩. In NiSi0.95Ge0.05, (001) and (102) maintained their preferential orientations, whereas NiSi0.95Ge0.05(100) was rotated by 30°, so that NiSi0.95Ge0.05[010]‖Si0.95Ge0.05⟨011⟩. An epitaxial alignment in the form of a double axiotaxy, with NiSi0.95Ge0.05(2±11) as well as (20−2)‖Si0.95Ge0.05{220}, simultaneously with NiSi0.95Ge0.05(0±13) as well as (020)‖Si0.95Ge0.05{022}, caused NiSi0.95Ge0.05(100) to tilt over the range of 0°–7.5°. The Ge addition also enhanced the preferentially oriented structure by reinforcing NiSi0.95Ge0.05(123)‖Si0.95Ge0.05(111) through the axiotaxial alignments, NiSi0.95Ge0.05(211) and (−112)‖Si0.95Ge0.05{220}. Observed was also the presence of NiSi0.95Ge0.05(011)‖Si0.95Ge0.05(111), with NiSi0.95Ge0.05[100]‖Si0.95Ge0.05⟨011⟩. In the case of NiSi0.80Ge0.20, the preferential orientations were sharply reduced in favor of NiSi0.80Ge0.20(100)‖Si0.80Ge0.20(111), with NiSi0.80Ge0.20[010]‖Si0.80Ge0.20⟨011⟩ and the 30° rotation thus preserved. The observed Ge influence is shown to be consistent with a model suggested earlier for Si1−xGex(001) substrates, which is based on the nonexistence of Ni(Si1−xGex)2 for all except the smallest values of x. High-resolution transmission electron microscopy was used to show that the surface steps typical of molecular-beam-deposited epitaxial Si1−xGex substrate films do not influence the growth of the NiSi1−xGex.

Molecular-dynamics simulation of Si1-xGex epitaxial growth on Si(1 0 0)

Molecular-dynamics simulation of Si1−xGex epitaxial growth on Si(100)

Study of Si1-xGEx epitaxy growth on Si(100) and Si(111)

Study of Si and Ge growth on Si(100) surface

The dependence of GexSi1-x epitaxial growth on GeH4 flow using chemical vapour deposition

Kinetics and transport model for the chemical vapor epitaxy of GexSi1-x

A Dislocation-Driven Laminated Relaxation Process in Si1−xGex Grown on Si (001) by Molecular Beam Epitaxy

Influence of Germanium on the Formation of NiSi1−xGex on (111)-Oriented Si1−xGex

Study of Ge Epitaxial Growth on Si Substrates by Cluster Beam Deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Monte Carlo Modeling of Ge Surface Segreation in Si1-xGex Thin Films

Simulation on Ion Implantation into SiGe Substrate

Kinetics and transport model of GexSi1-x chemical vapor epitaxy

Single-Crystalline Si1-Xgex (X=0.5 Similar To 1) Thin Films On Si (001) With Low Threading Dislocation Density Prepared By Low Temperature Molecular Beam Epitaxy

Two-Dimensional Si-Ge Monolayers: Stabilities, Structures and Electronic Properties

Effect of Stresses on Defect Nucleation in Si1-xGex/Si Heteroepitaxial Systems

Tight-binding Study of the Strained Monolayer Superlattices (si)1/(si1−xgex)1 (100)

Growth of Ge-Si strained layers and DC XRD study on epitaxial films

Germanium-Induced Texture And Preferential Orientation Of Nisi1-Xgex Layers On Si1-Xgex

Simulation study on Si and Ge film growth by cluster deposition

Effect of Stresses on Defect Nucleation in Si<sub>1−.x</sub>Ge<sub>x</sub>/Si Heteroepitaxial Systems