Simulation study on Si and Ge film growth by cluster deposition

H.W Lu,J.Q Xie,J.Y Feng
DOI: https://doi.org/10.1016/S0168-583X(00)00060-4
2000-01-01
Abstract:Si and Ge thin film growth from cluster beams has been investigated with molecular-dynamics simulations utilizing the Stillinger-Weber (SW) two- and three-body interaction potentials. The spreading of cluster atoms and the structure of grown films have been studied as a function of incident cluster velocity. We found that higher surface diffusion and spreading of the deposited clusters, which were achieved with a moderate cluster velocity, are necessary for the epitaxial film. However, a very high cluster velocity leads to the damage of the substrate and the growing films. The substrate temperature also plays an important role in the growth of the films. (C) 2000 Elsevier Science B.V. All rights reserved.
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