Abstract:The performance of strained silicon as the channel material for transistors has plateaued. Motivated by increasing charge-carrier mobility within the device channel to improve transistor performance, germanium (Ge) is considered as an attractive option as a silicon replacement due to its highest p-type mobility in all of the known semiconductor materials and being compatible with today's conventional CMOS manufacturing process. However, the intrinsically high carrier mobility of Ge becomes significantly degraded because Ge's native oxide is unstable and readily decomposes into several GexOy suboxides with a high density of dangling bonds at the surface. In addition, these interface trap states will also degrade the off-state leakage current and subthreshold turn-off of a Ge-based device, significantly affecting its stability. Furthermore, obtaining low-resistance Ohmic contacts to n-type Ge is another key challenge in developing Ge CMOS. To solve these challenges, extensive efforts have been made about the incorporation of new materials, such as Al2O3, SiN3, TiO2, ZnO, Ge3N4, MgO, HfO2, SrTiO3, and Y2O3, into Ge transistors. Controlling the diffusion of foreign atoms into Ge is therefore a critical issue in developing Ge transistors regarding that foreign impurities may be detrimental to devices. In this work, we study the diffusion properties of all common elements in Ge by performing the first-principle calculations with a nudged elastic band method. We find some large atoms, such as Cu, Au, Pd, etc., have a very small diffusion barrier. We reveal the underlying mechanism in a combination of local distortion induced by size effect and bonding effect that controls the diffusion behaviors of different atoms in Ge. This comprehensive study and relatively in-depth understanding of diffusion in Ge provides us with a practical guide for utilizing it more efficiently in semiconductor devices.

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Study of Si and Ge growth on Si(100) surface

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

The growth and investigation of SiGe films on buried Ge islands

Island-growth of SiCGe films on SiC

Strain Effect on Adatom Binding and Diffusion in Homo- and Heteroepitaxies of Si and Ge on ( 001) Surfaces.

Single Adatom Site Exchange During the Ge Growth on Group V Element Covered Si(001)

Ge/Si Interdiffusion In The Gesi Dots And Wetting Layers

Ge Migration Effect of Si/Ge-N/Si(100) Heterostructure Films Probed by Grazing Incidence Fluorescence X-Ray Absorption Fine Structure

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

The difference between Si and Ge(001) surfaces in the initial stages of growth

Strain Relaxation in Heteroepitaxial Si<sub>1-x</sub>Ge<sub>x</sub> Films via Surface Roughening Processes

Lattice Strains and Composition of Self-Organized Ge Dots Grown on Si(001)

Atomic mechanisms of fast diffusion of large atoms in Germanium

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Strains in Si Substrate Induced by Formation of Ge Islands

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Epitaxial growth of low dislocation Ge thin films on Si (001) substrates using a Si-Ge intermediate layer

Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in Gesi Epitaxy Layers on Si Wafer

High-quality Ge film grown on Si substrate and its thermodynamic mechanism