Abstract:We discuss the SiGe island co-sputtering deposition on a microcrystalline silicon (μc-Si) buffer layer and the secondary island growth based on this pre-SiGe island layer. The growth phenomenon of SiGe islands on crystalline silicon (c-Si) is also investigated for comparison. The pre-SiGe layer grown on μc-Si exhibits a mixed-phase structure, including SiGe islands and amorphous SiGe (a-SiGe) alloy, while the layer deposited on c-Si shows a single-phase island structure. The preferential growth and Ostwald ripening growth are shown to be the secondary growth mechanism of SiGe islands on μc-Si and c-Si, respectively. This difference may result from the effect of amorphous phase Si (AP-Si) in μc-Si on the island growth. In addition, the Si-Ge intermixing behavior of the secondary-grown islands on μc-Si is interpreted by constructing the model of lateral atomic migration, while this behavior on c-Si is ascribed to traditional uphill atomic diffusion. It is found that the aspect ratios of the preferential-grown super islands are higher than those of the Ostwald-ripening ones. The lower lateral growth rate of super islands due to the lower surface energy of AP-Si on the μc-Si buffer layer for the non-wetting of Ge at 700 °C and the stronger Si-Ge intermixing effect at 730 °C may be responsible for this aspect ratio difference.

Secondary growth mechanism of SiGe islands deposited on a mixed-phase microcrystalline Si by ion beam co-sputtering

The growth and investigation of SiGe films on buried Ge islands

Island-growth of SiCGe films on SiC

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Study of Si and Ge growth on Si(100) surface

Structure analysis of SiCGe films grown on SiC

Evolution of GeSi Islands in Epitaxial Ge-on-Si During Annealing

Strain-Mediated Uniform Islands in Stacked Ge/Si(001) Layers

Structural Analysis of the SiCGe Epitaxial Layer Grown on SiC Substrate

Atomic Composition Profile Change of SiGe Islands During Si Capping

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System