Abstract:The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

Cytologic diagnostic approach to poorly differentiated thyroid carcinoma: A single‐institution study

The growth and investigation of SiGe films on buried Ge islands

Island-growth of SiCGe films on SiC

Surface Mobility Difference Between Si and Ge and Its Effect on Growth of SiGe Alloy Films and Islands.

Ge/Si superlatices grown on thin relaxed GeSi alloy buffer with Ge islanding buried layer

Study of Si and Ge growth on Si(100) surface

Atomic Composition Profile Change of SiGe Islands During Si Capping

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Extracting Composition and Alloying Information of Coherent Ge(Si)/Si(001) Islands from [001] On-Zone Bright-Field Diffraction Contrast Images

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Structural Characteristics of Self-Assembled-Ge/Si Quantum Dot Superlattices

Effect of Interlayer Strain Interaction on the Island Composition and Ordering in Ge/Si(001) Island Superlattices

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Self-Assembled Sige Islands with Uniform Shape and Size by Controlling Si Concentration in Islands

Growth Mechanisms in Thin Film Epitaxy of Si/Sige from Hydrides

Growth and Characterization of SiGe on c-Plane Sapphire Using a Chemical Vapor Deposition System

Influence of Si Concentration on the Evolution of Shape and Size of Self-Assembled Ge Islands

Composition and Strain Measurements of Ge(Si)/Si(001) Islands by HRTEM.

Investigation of Composition in Nano-Scaled Self-Assembled Sige Islands

Composition and Its Impact on Shape Evolution in Dislocated Ge(Si)/Si Islands