Abstract:Si/Ge heteroepitaxial dots under tensile strain are grown on nanostructured Ge substrates produced by high-temperature flash heating exploiting the spontaneous faceting of the Ge(001) surface close to the onset of surface melting. A very diverse growth mode is obtained depending on the specific atomic structure and step density of nearby surface domains with different vicinal crystallographic orientations. On highly-miscut areas of the Ge(001) substrate, the critical thickness for islanding is lowered to about 5 ML, in contrast to the 11 ML reported for the flat Ge(001) surface, while on unreconstructed (1x1) domains the growth is Volmer-Weber driven. An explanation is proposed considering the diverse relative contributions of step and surface energies on misoriented substrates. In addition, we show that the bottom-up pattern of the substrate naturally formed by thermal annealing determines a spatial correlation for the dot sites.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the island - growth mode, critical thickness and spatial ordering of Si heteroepitaxial dots grown on Ge(001) substrates under different surface structures and crystal orientations. Specifically, the researchers focus on: 1. **Island - growth mode and critical thickness**: How does the critical thickness (the minimum thickness required for the transition from two - dimensional to three - dimensional growth) of Si/Ge heteroepitaxial growth change under different surface structures and crystal orientations? In particular, in the highly - miscut Ge(001) region with high density steps, the critical thickness is reduced to about 5 monolayers (ML), while on the flat Ge(001) surface it is 11 ML. 2. **Influence of surface structure on growth mode**: It was found that in the unreconstructed (1x1) region, the growth mode is of the Volmer - Weber (VW) type, and in the highly misaligned (2x1) reconstructed region, the critical thickness is significantly reduced. This indicates that the surface structure has an important influence on the growth mode. 3. **Spatial ordering**: Through scanning tunneling microscopy (STM) observations, the researchers found that there is an obvious spatial correlation between the nucleation positions of Si dots and the spontaneous configuration pattern of the substrate, and in particular, larger three - dimensional islands are formed at the step edges. This ordering provides a feasible strategy for bottom - up self - assembly. ### Key scientific questions - **Strain - driven island - growth**: During the Si/Ge heteroepitaxial growth process, due to the presence of strain, the Si thin film will grow in an island - like manner on the Ge substrate. The paper explores the influence of strain on island - growth under different surface structures. - **Roles of surface energy and step energy**: The researchers analyzed the relative contributions of surface energy and step energy under different crystal orientations and surface structures, and explained why the critical thickness is significantly reduced in some regions. - **Regulation mechanism of self - assembly**: By controlling the surface structure of the substrate, the spatial ordered arrangement of Si dots can be achieved, thus providing a new approach for the self - assembly of nanostructures. ### Research methods - **High - temperature flash annealing**: The Ge(001) substrate is treated by high - temperature flash annealing to form step structures with different crystal orientations on its surface. - **STM observation**: The growth behavior of Si at different coverages is observed in real - time by using scanning tunneling microscopy (STM), and its morphological evolution is analyzed. - **Theoretical analysis**: Combining the experimental results, the influence of surface structure on growth mode and critical thickness is explained through a theoretical model. Through these studies, the paper reveals the important influence of surface structure on Si/Ge heteroepitaxial growth, and provides theoretical and experimental bases for further regulating the self - assembly of nanostructures.

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