Abstract:Abstract Low-dimensional semiconductor structurers formed on a substrate surface at pre-defined locations and with nano-precision placement is of vital interest. The potential of tailoring their electrical and optical properties will revolutionize the next generation of optoelectronic devices. Traditionally, highly aligned self-assembly of semiconductors relies on Stranski- Krastanov growth mode. In this work, we demonstrate a pathway towards ordered configuration of Ge islands on low lattice mismatch GaAs (110) substrate patterned using depth-controlled nanoindentation. Diamond probe tips with different geometries are used to nano-mechanically stamp the surface of GaAs (110). This creates nanoscale volumes of dislocation-mediated deformation which acts to bias nucleation. Results show that nanostamped GaAs exhibits selective-nucleation of Ge at the indent sites. Ge islands formed on a surface patterned using cube corner tip have height of ~10 nm and lateral size of ~225 nm. Larger islands are formed by using Vickers and Berkovich diamond tips (~400 nm). The strain state of the patterned structures is characterized by micro-Raman spectroscopy. A strain value up to 2% for all tip geometries has been obtained. Additionally, strong room temperature photoluminescence (PL) emission is observed around 1.9 μm (650 meV). The observed strain-induced enhancement in the light-emission efficiency is attributed to direct conduction to heavy-hole (cΓ-HH) and conduction to light-hole (cΓ-LH) transitions. The inherent simplicity of the proposed method offers an attractive technique to manufacture semiconductor quantum dot structures for future electronic and photonic applications.

Dislocation-free Ge Nano-crystals via Pattern Independent Selective Ge Heteroepitaxy on Si Nano-Tip Wafers

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Control of Ge island coalescence for the formation of nanowires on silicon.

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Fabrication of core-shell nanostructures via silicon on insulator dewetting and germanium condensation: towards a strain tuning method for SiGe-based heterostructures in a three-dimensional geometry

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Controllable growth of GeSi nanostructures by molecular beam epitaxy

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics

Mechanical Nano-Patterning: Toward Highly-Aligned Ge Self-Assembly on Low Lattice Mismatched GaAs Substrate

A nano-droplet hydrodynamic transformation of uniform amorphous bilayer into highly modulated Ge/Si island-chains.

Surface Mass Transport and Island Nucleation During Growth of Ge on Laser Textured Si(001)

Nanoheteroepitaxy of Ge and SiGe on Si: role of composition and capping on quantum dot photoluminescence

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Self-assemble SiGe Island Structures Formed by Nanosecond Laser Irradiation on SiGe Virtual Film

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

Fabrication of High Quality Ge Virtual Substrates by Selective Epitaxial Growth in Shallow Trench Isolated Si (001) Trenches

Promising Features of Low-Temperature Grown Ge Nanostructures on Si(001) Substrates