Abstract:Gallium phosphide (GaP) is a III-V semiconductor with remarkable optoelectronic properties, and it has almost the same lattice constant as silicon (Si). However, to date, the monolithic and large-scale integration of GaP devices with silicon remains challenging. In this study, we present a nanoheteroepitaxy approach using gas-source molecular-beam epitaxy for selective growth of GaP islands on Si nanotips, which were fabricated using complementary metal-oxide semiconductor (CMOS) technology on a 200 mm n-type Si(001) wafer. Our results show that GaP islands with sizes on the order of hundreds of nanometers can be successfully grown on CMOS-compatible wafers. These islands exhibit a zinc-blende phase and possess optoelectronic properties similar to those of a high-quality epitaxial GaP layer. This result marks a notable advancement in the seamless integration of GaP-based devices with high scalability into Si nanotechnology and integrated optoelectronics.

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to achieve the selective growth of gallium phosphide (GaP) on silicon nanotips (Si nanotips) to promote the monolithic integration of GaP devices with silicon technology. Specifically, the researchers used gas - source molecular - beam epitaxy (GS - MBE) technology to prepare nanotip arrays on 200 - mm n - type Si(001) wafers compatible with CMOS, and achieved the selective growth of GaP islands through the nano - heteroepitaxy method. ### Background and Challenges GaP is a III - V semiconductor with excellent optoelectronic properties. Its lattice constant is close to that of silicon (Si), which makes GaP an ideal material for integration with silicon. However, due to differences in crystal structure, thermal expansion coefficient, and polar/non - polar hetero - interface, the monolithic integration of GaP and silicon has always been challenging. These factors lead to a large number of structural defects in the epitaxial layer, such as stacking faults/micro - twins, misfit dislocations and threading dislocations, as well as anti - phase domains (APDs), which seriously affect the optoelectronic properties of the devices. ### Research Objectives The objective of this research is to reduce the interface area between GaP and silicon through the nano - heteroepitaxy method, thereby suppressing the formation of defects and achieving the selective growth of high - quality GaP islands on silicon nanotips. Specific objectives include: 1. **Optimize growth conditions**: Determine the optimal growth temperature, PH3 flow rate, and growth rate to achieve the selective growth of GaP on silicon nanotips. 2. **Characterize growth results**: Use techniques such as scanning electron microscopy (SEM), atomic force microscopy (AFM), X - ray diffraction (XRD), and Raman spectroscopy to characterize the morphology and structure of the grown GaP islands. 3. **Evaluate optical properties**: Evaluate the optical properties of GaP islands through photoluminescence (PL) spectroscopy. ### Main Findings 1. **Selective growth window**: The study found that the optimal growth temperature range is between 520 and 570 °C. Within this range, GaP islands can be selectively grown on silicon nanotips without parasitic growth on the SiO2 mask. 2. **Bimodal growth mode**: Under certain conditions, GaP islands exhibit a bimodal growth mode, that is, there are two different distributions in the size and shape of the islands. This bimodal growth may be related to atomic diffusion and island coalescence. 3. **Island morphology and structure**: Through AFM and XRD analysis, the study found that GaP islands have a zinc - blende phase, and there are multiple crystal planes on the surface of the islands, among which the densities of the {313} and {111} crystal planes are the highest, which is consistent with the low - surface - energy characteristics of zinc - blende - phase GaP. ### Significance This research provides an important experimental basis and technical support for the seamless integration of GaP - based devices with silicon technology. Through the nano - heteroepitaxy method, the interface defects between GaP and silicon can be effectively reduced, the performance and reliability of devices can be improved, and new paths can be opened up for future integrated optoelectronics and nanotechnology applications.

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