Abstract:Sub‐10‐nm‐thick strain‐relaxed Si1−xGex buffer layers are fabricated on Si by oxidative solid‐phase epitaxy and employed as a new platform for group III‐V heteroepitaxy on the Si platform. Si1−xGex/Si interface strain relaxation occurs via a periodic dislocation network coinciding with composition fluctuations, resulting from defect‐mediated diffusion of Si and Ge during oxidation. The explosion of artificial intelligence, the possible end of Moore's law, dawn of quantum computing, and the continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on group III‐V platforms have long‐powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm‐shifting solution requires exploring new and unconventional materials and integration approaches. In this work, it is shown that a sub‐10‐nm ultra‐thin Si1−xGex buffer layer fabricated by an oxidative solid‐phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si1−xGex layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion‐damaged layer, precipitating a fully strain‐relaxed Ge‐rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si1−xGex layer and indicating the presence of defect‐mediated diffusion of Si through the layer. The epitaxial growth of high‐quality GaAs is demonstrated on this ultra‐thin Si1−xGex layer, demonstrating a promising new pathway for integrating III‐V lasers directly on the Si platform.

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Strain relaxation of GaAs/Ge crystals on patterned Si substrates

500-period epitaxial Ge/Si0.18Ge0.82 multi-quantum wells on silicon

Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy

Defect free strain relaxation of microcrystals on mesoporous patterned silicon

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Ultra‐Thin Strain‐Relieving Si1−xGex Layers Enabling III‐V Epitaxy on Si

Islanding, growth mode and ordering in Si heteroepitaxy on Ge(001) substrates structured by thermal annealing

Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Formation of Thin GaAs Buffer Layers on Silicon for Light-Emitting Devices

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit

Epitaxial Ge thin film Growth on Si Using a Cost-Effective Process in Simplified CVD Reactor

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

Study of Monocrystalline Structure of GaAs/Si Grown by VPE

Tuning performance: strain modulation of GaAs layers grown on meso-porous silicon substrates

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications