Abstract:III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality photonic 1D components, making monolithic integration of III-V components on arbitrary substrates challenging. In this work, we show that the growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by creating step edges of monolayer thickness on kish graphite before the growth. By further alternating the deposition sequence of the group-III element Al and the group-V elements As and Sb, it was found that triangular crystallites form when Al is deposited first. This indicates that the surface binding energy between the graphitic surface and the III-V nucleus profoundly influences the epitaxial growth of III-V materials on graphitic surfaces. Using the optimized growth recipe with an AlAsSb buffer nuclei, vertical [111]-oriented GaAsSb/GaAs nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) using the simple Scotch tape method. Fabry-Pérot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system. These results demonstrate the great potential for flexible integration of high-efficiency III-V nanowire photonic devices on arbitrary photonic platforms using a 2D material buffer layer, e.g., graphene, without breaking the orientation registry.

Direct Integration of Iii-V Compound Semiconductor Nanostructures on Silicon by Selective Epitaxy

Selectively-grown III-V compound semiconductor nano/micro structures on silicon for optoelectronics applications

InAs/GaAs nanostructures grown on patterned Si(001) by molecular beam epitaxy.

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Direct growth of single-crystalline III–V semiconductors on amorphous substrates

GaAs/Ge crystals grown on Si substrates patterned down to the micron scale

Facile Five-Step Heteroepitaxial Growth of GaAs Nanowires on Silicon Substrates and the Twin Formation Mechanism.

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

Single-crystal germanium layers grown on silicon by nanowire seeding

Single Crystalline InGaAs Nanopillar Grown on Polysilicon with Dimensions beyond Substrate Grain Size Limit

Selective area growth of in-plane InAs nanowires and nanowire networks on Si substrates by molecular-beam epitaxy

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

(Invited) Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Substrates

Monolithic lateral p-n junction GaAs nanowire diodes via selective lateral epitaxy

Epitaxial Growth of Ordered In-Plane Si and Ge Nanowires on Si (001)

In-plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates.