Abstract:Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however, it has remained challenging to achieve III-nitride heterostructures on Si with controlled lattice-polarity. Herein, we show that such critical challenges of III-nitrides on Si can be fundamentally addressed through a unique interfacial modulated lattice-polarity-controlled epitaxy (IMLPCE). It is discovered that the lattice-polarity of aluminum nitride (AlN) grown on Si(111) is primarily determined by the AlSiN interlayer: N-polar and Al-polar AlN can be achieved by suppressing and promoting the AlSiN interlayer formation, respectively. Furthermore, we develop a unique active-nitrogen-free in situ annealing process to mitigate the AlSiN layer formation at the GaN/AlN interface, which can eliminate the inverted domain formation commonly seen in N-polar GaN on AlN/Si. This study provides an alternative approach for controlling the lattice-polarity of III-nitrides on Si substrates and will enable their seamless integration with the mature Si-based device technology.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c23381.Additional RHEED patterns and SEM images of AlN/Si(111) and GaN/AlN/Si(111) samples grown with different conditions, and related discussions (PDF)This article has not yet been cited by other publications.

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Lattice Polarity Manipulation of AlN Films on SiC Substrates for N-Polar GaN HEMTs

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over A-Plane SiC Substrates

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

Realization of N-polarity GaN Films on Graphene/sic Substrates by Interfacial Atomic Manipulation

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Optical Anisotropy Modulation in Nonpolar A-Plane AlGaN by Manipulating the Anisotropic In-Plane Strains Through SiNx Interlayers Engineering

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

Group-III nitride heteroepitaxial films approaching bulk-class quality

Achieving atomically ordered GaN/AlN quantum heterostructures: The role of surface polarity

Polarity Control and Crystalline Quality Improvement of AlN Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy

III-Nitride Magnetron Sputter Epitaxy on Si: Controlling Morphology, Crystal Quality, and Polarity Using Al Seed Layers

Growth and Polarity Control of GaN and AlN on Carbon-face SiC by Metalorganic Vapor Phase Epitaxy

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

Demonstration of controllable Si doping in N-polar AlN using plasma-assisted molecular beam epitaxy

Polarity-Controlled GaN Epitaxial Films Achieved Via Controlling the Annealing Process of ScAlMgO4 Substrates and the Corresponding Thermodynamic Mechanisms

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD