The role of intraoperative Gram stain in revision total joint arthroplasty.

Craig J. Della Valle,David M. Scher,Yong H. Kim,Cubyson M. Oxley,Panna Desai,Joseph D. Zuckerman,P. E. D. Cesare

DOI: https://doi.org/10.1016/S0883-5403(99)90108-0

1999-06-01

Abstract:

What problem does this paper attempt to address?

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Haotian Ye,Rui Wang,Liuyun Yang,Jinlin Wang,Tao Wang,Ran Feng,Xifan Xu,Wonseok Lee,Ping Wang,Xinqiang Wang

DOI: https://doi.org/10.1063/5.0228747

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Rare-earth (RE) elements doped III-nitride semiconductors have garnered attention for their potential in advanced high-frequency and high-power electronic applications. We report on the molecular beam epitaxy of quaternary alloy ScAlInN, which is an encouraging strategy to improve the heterointerface quality when grown at relatively low temperatures. Monocrystalline wurtzite phase and uniform domain structures are achieved in ScAlInN/GaN heterostructures, featuring atomically sharp interface. ScAlInN (the Sc content in the ScAlN fraction is 14%) films with lower In contents (less than 6%) are nearly lattice matched to GaN, exhibiting negligible in-plane strain, which are excellent barrier layer candidates for GaN high electron mobility transistors (HEMTs). Using a 15-nm-thick Sc0.13Al0.83In0.04N as a barrier layer in GaN HEMT, a two-dimensional electron gas density of 4.00 × 1013 cm−2 and a Hall mobility of 928 cm2/V s, with a corresponding sheet resistance of 169 Ω/□, have been achieved. This work underscores the potential of alloy engineering to adjust lattice parameters, bandgap, polarization, interfaces, and strain in emerging RE-III-nitrides, paving the way for their use in next-generation optoelectronic, electronic, acoustic, and ferroelectric applications.
High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

M M Muhammed,M A Roldan,Y Yamashita,S-L Sahonta,I A Ajia,K Iizuka,A Kuramata,C J Humphreys,I S Roqan

DOI: https://doi.org/10.1038/srep29747

2016-07-14

Abstract:We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.
Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN

Ping Wang,Ding Wang,Yutong Bi,Boyu Wang,Jonathan Schwartz,Robert Hovden,Zetian Mi

DOI: https://doi.org/10.1063/5.0060608

IF: 4

2022-01-03

Applied Physics Letters

Abstract:ScAlN is an emerging ultrawide bandgap semiconductor for next-generation radio frequency electronic devices. Here, we show that the material quality of ScAlN grown by molecular beam epitaxy can be drastically improved by alloying with Ga. The resulting quaternary alloy ScAlGaN exhibits a single-phase wurtzite structure, atomically smooth surface, high crystal quality, sharp interface, and low impurity concentration. Most significantly, oxygen impurity incorporation in ScAlGaN is found to be three to four orders of magnitude lower compared to that for ScAlN grown on AlN templates utilizing a similar Sc source. We further demonstrate that ScAlGaN/GaN superlattices exhibit clear periodicity with sharp interfaces. Moreover, GaN high electron mobility transistors with high sheet electron density and high mobility have been realized using ScAlGaN as a barrier. This work provides a viable approach for achieving high-quality Sc-III-N semiconductors that were not previously possible and further offers additional dimensions for bandgap, polarization, interface, strain, and quantum engineering.

physics, applied
Wafer-scale Heteroepitaxy GaN Film Free of High-Density Dislocation Region with Hexagonal 3D Serpentine Mask

Menglai Lei,Huanqing Chen,Muhammad Saddique Akbar Khan,Shukun Li,Rui Lang,Peijun Wen,Guo Yu,Shengxiang Jiang,Hua Zong,Xiaodong Hu

DOI: https://doi.org/10.1016/j.apsadv.2023.100449

2023-01-01

Applied Surface Science Advances

Abstract:GaN-based III-Nitride compound semiconductors are fundamental materials for high-performance optoelectronic and electronic devices. Low-defect-density substrate has been a major bottleneck in achieving high internal quantum efficiency and high breakdown voltage in those devices. However, a large-scale and uniform low dislocation density GaN film is still hard to obtain on foreign substrates, which is the mainstream economical method in scientific research and industrial production. Here, we present a 3D serpentine mask method of growing high-quality GaN film on foreign substrates without high dislocation density (HDD) areas by designing both sectional and planar shapes of stacked masks. The serpentine channel in the cross-section mechanically blocks the extended dislocations and the hexagonal planar pattern reduces the dimension of coalescence geometry. A wafer-scale GaN epilayer, free of HDD zone, with the overall threading dislocation density of 1.7 × 107 cm−2 estimated by plan-view cathode luminescence, is achieved in the metal-organic chemical vapor deposition system. Then, an array of light-emitting diodes based on this substrate with low forward voltages and high light output powers are fabricated, which introduces a practical method to provide high-quality GaN films for high-performance optoelectronic devices.
Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Bin Tang,Zehong Wan,Hongpo Hu,Liyan Gong,Shengjun Zhou

DOI: https://doi.org/10.1063/5.0048656

IF: 4

2021-06-28

Applied Physics Letters

Abstract:We report the metal-organic chemical vapor deposition growth of high-quality AlN on sapphire enabled by an alternating V/III ratio AlN superlattice. We demonstrated that the insertion of an alternating V/III ratio AlN superlattice facilitates the relaxation of tensile stress during growth and assists the annihilation of threading dislocations. Dislocation inclination was proposed to play a major role in the stress relaxation and dislocation reduction, which not only provides an effective misfit-dislocation component but also increases the dislocation reaction probability. By this method, crack-free 3.25 μm-thick AlN films were grown on flat sapphire substrate (FSS) and nano-patterned sapphire substrate (NPSS) at 1180 °C, and the full width at half maximum of (002)/(102) rocking curves was 204/408 and 152/323 arcsec for such AlN/FSS and AlN/NPSS templates.

physics, applied
Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Mingtao Nong,Che-Hao Liao,Xiao Tang,Haicheng Cao,Tingang Liu,Patsy A. Miranda Cortez,Dhanu Chettri,Glen Isaac Maciel García,Xiaohang Li

DOI: https://doi.org/10.1063/5.0207884

IF: 4

2024-04-22

Applied Physics Letters

Abstract:This study investigated the growth of AlN epitaxial films on 2-in. Si(111) via metal-organic chemical vapor deposition. By introducing triethylboron (TEB) during trimethylaluminum pretreatment, a nearly crack free AlN epilayer with a thickness of 500 nm was acquired. The x-ray diffraction rocking curves of AlN (002) and (102) exhibited full width at half maximum values of 0.22° and 0.36°, respectively. Atomic force microscopy image analysis showed that after the introduction of TEB, larger grains appeared on the surface of Si(111) substrate, promoting the 3D growth pattern of the subsequent AlN buffer layer. Laytec reflection curves depicted the morphological transition from 3D to 2D growth mode during AlN deposition. At the same time, the curvature value was significantly reduced by 20 km−1, and the Raman spectrum peak of E2(high) shifted from 648.7 to 652.5 cm−1, indicating that the surface tensile stress was greatly reduced, effectively suppressing the crack problem of AlN on Si(111).

physics, applied
Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Ping Wang,Ding Wang,Shubham Mondal,Yuanpeng Wu,Tao Ma,Zetian Mi

DOI: https://doi.org/10.1021/acsami.1c23381

2022-03-25

Abstract:Monolithic integration of wurtzite III-nitrides with nonpolar silicon (Si), the two most-produced semiconductor materials, is essential and critical for a broad range of applications in electronics, optoelectronics, quantum photonics, and renewable energy. To date, however, it has remained challenging to achieve III-nitride heterostructures on Si with controlled lattice-polarity. Herein, we show that such critical challenges of III-nitrides on Si can be fundamentally addressed through a unique interfacial modulated lattice-polarity-controlled epitaxy (IMLPCE). It is discovered that the lattice-polarity of aluminum nitride (AlN) grown on Si(111) is primarily determined by the AlSiN interlayer: N-polar and Al-polar AlN can be achieved by suppressing and promoting the AlSiN interlayer formation, respectively. Furthermore, we develop a unique active-nitrogen-free in situ annealing process to mitigate the AlSiN layer formation at the GaN/AlN interface, which can eliminate the inverted domain formation commonly seen in N-polar GaN on AlN/Si. This study provides an alternative approach for controlling the lattice-polarity of III-nitrides on Si substrates and will enable their seamless integration with the mature Si-based device technology.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c23381.Additional RHEED patterns and SEM images of AlN/Si(111) and GaN/AlN/Si(111) samples grown with different conditions, and related discussions (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Hualong Wu,Kang Zhang,Chenguang He,Longfei He,Qiao Wang,Wei Zhao,Zhitao Chen

DOI: https://doi.org/10.3390/cryst12010038

IF: 2.7

2021-12-27

Crystals

Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

materials science, multidisciplinary,crystallography
Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Jiadong Yu,Zhibiao Hao,Jun Deng,Xiang Li,Lai Wang,Yi Luo,Jian Wang,Changzheng Sun,Yanjun Han,Bing Xiong,Hongtao Li

DOI: https://doi.org/10.1016/j.jallcom.2020.157508

IF: 6.2

2021-01-01

Journal of Alloys and Compounds

Abstract:Low-temperature growth of III-nitride semiconductor materials on non-single-crystalline substrates is necessary to realize inexpensive and large-area transferable GaN-films for flexible devices. In this work, the growth conditions and material properties of III-nitride films have been explored using plasmaassisted molecular beam epitaxy and AlN as a buffer layer. Migration enhanced epitaxy mode is the most suitable for the realization of low-temperature van der Waals epitaxy (vdWE). An AIN buffer layer with thickness of 10 nm grown by the MEE mode results in the optimizedcrystalline quality and surface flatness, which is extremely beneficial for the subsequentGaN film epitaxy. A single-crystalline GaN film with a flat surface has been obtained on AlN/graphene/quartz substrate at 530 degrees C, possessinga dislocation density about 1.10 x 10(11) cm(-2) and a RMS surface roughness of 2.04 nm for 10 x 10 mu m(2) area. The results obtained in this work can be applied to vdWE of III-nitrides on other 2D material/non-singlecrystalline substrates for their further applications in flexible devices or circuits. (C) 2020 Elsevier B.V. All rights reserved.
Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Yunyu Wang,Shenyuan Yang,Hongliang Chang,Weijiang Li,Xiufang Chen,Rui Hou,Jianchang Yan,Xiaoyan Yi,Junxi Wang,Tongbo Wei

DOI: https://doi.org/10.1016/j.apsusc.2020.146358

IF: 6.7

2020-08-01

Applied Surface Science

Abstract:Graphene has attracted much attention as novel buffer layer to grow III-nitrides. Here direct van der Waals epitaxy (vdWE) of high quality AlN films on graphene/SiC is demonstrated by effective lattice engineering and detailed nucleation mechanism is presented. The AlN films on graphene show high single crystalline quality, with the full width at half maximum (FWHM) of 79 arcsec for (102) asymmetry plane and 148 arcsec for (002) symmetry plane, respectively. First-principles calculations demonstrate the introduction of graphene enables the tunable lattice constant for the heteroepitaxy system and effectively releases the biaxial strains in AlN epilayers. The lattice engineering to minimize the strain of the epilayers is further confirmed by Raman spectra shift of graphene 2D peak. This provides a feasible way to grow high-quality AlN films with no cracks to meet the strict demands of devices, especially in ultraviolet optoelectronic devices.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Progress in Group III Nitride Semiconductor Electronic Devices

Hao Yue,Zhang Jinfeng,Shen Bo,Liu Xinyu

DOI: https://doi.org/10.1088/1674-4926/33/8/081001

2012-01-01

Abstract:Recently there has been a rapid domestic development in group III nitride semiconductor electronic materials and devices. This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China, which focuses on the research of the fundamental physical mechanisms of group III nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials, develop new GaN heterostructures, and eventually achieve high performance GaN microwave power devices. Some remarkable progresses achieved in the program will be introduced, including those in GaN high electron mobility transistors (HEMTs) and metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators, and material growth, defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication, and quantum transport and spintronic properties of GaN-based heterostructures, and highelectric- field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.
Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

Stacia Keller,Haoran Li,Matthew Laurent,Yanling Hu,Nathan Pfaff,Jing Lu,David F. Brown,Nicholas A. Fichtenbaum,James S. Speck,Steven P. DenBaars,Umesh K. Mishra

DOI: https://doi.org/10.1088/0268-1242/29/11/113001

IF: 2.048

2014-01-01

Semiconductor Science and Technology

Abstract:Progress in metal-organic chemical vapor deposition of high quality (000 (1) over bar) N-polar (Al, Ga, In)N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key process components such as utilization of vicinal substrates, conditions ensuring a high surface mobility of species participating in the growth process, and low impurity incorporation. The high quality of the fabricated films enabled the demonstration of N-polar (Al, Ga, In)N based devices with excellent performance for transistor applications. Challenges related to the growth of high quality N-polar InGaN films are also presented.
Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Luxiao Xie,Hui Zhang,Xinjian Xie,Endong Wang,Xiangyu Lin,Yuxuan Song,Guodong Liu,Guifeng Chen

DOI: https://doi.org/10.1021/acsomega.2c01890

IF: 4.1

2022-07-20

ACS Omega

Abstract:The epitaxial aluminum nitride (AlN) crystals were grown on c-plane sapphire using high-temperature metal nitride vapor phase epitaxy at the source materials' different molar flow ratios (V/III ratios). The effects of various V/III ratios on the surface morphology, crystalline quality, material straining, and optical properties of heteroepitaxial AlN thin films were studied using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and photoluminescence (PL). With the increase in the V/III ratio from 1473 to 7367, the substrate surface underwent changes that vary from whiskers to three-dimensional island structures, two-dimensional layered stack structures, and stacked sheet structures. Additionally, due to the presence of nanoscale pits on the substrate surface, almost all samples were tensile stressers. The PL spectra demonstrated the defect luminescence of the epitaxial films, indicating that nitrogen vacancies and oxygen impurities were the samples' main defects.

chemistry, multidisciplinary
Crack-free > 1- μ m AlN layer on Si substrate using ductile interlayer for strain modification in epitaxial film

Muhammad Aqib,Mina Moradnia,Mihee Ji,Vijay S. Parameshwaran,Wendy L. Sarney,Sara Pouladi,Nam-In Kim,Rheno Paul Rajesh Kumar,Gregory A. Garrett,Anand V. Sampath,Rebecca L. Forrest,Jae-Hyun Ryou

DOI: https://doi.org/10.1063/5.0219833

IF: 4

2024-09-09

Applied Physics Letters

Abstract:Growing crack-free, epitaxial ultrawide-bandgap semiconductor films on cost-effective, large-area substrates, such as AlN on Si, poses a significant challenge due to substantial lattice and thermal expansion mismatches. We introduce an approach to mitigate tensile strain or reverse strain signs between the substrate and the AlN layer, thereby suppressing crack formation during the heteroepitaxial growth of thick III-N films. This approach introduces ductile metallic interlayers, specifically Au, to change the strain state of AlN from in-plane tensile to compressive, without initiating cracks. Furthermore, the Au interlayer is grown epitaxially as a single crystal, which prevents the transfer of tensile strain into the AlN film, as confirmed by x-ray diffraction and transmission electron microscopy. We demonstrate crack-free AlN films exceeding 1 μm in thickness. These findings hold significant promise for advancing the field of ultrawide-bandgap semiconductor materials, with potential applications in electronic, optoelectronic, sensing, and energy device applications.

physics, applied
Graphene‐Nanorod Enhanced Quasi‐Van Der Waals Epitaxy for High Indium Composition Nitride Films

Shuo Zhang,Bingyao Liu,Fang Ren,Yue Yin,Yunyu Wang,Zhaolong Chen,Bei Jiang,Bingzhi Liu,Zhetong Liu,Jingyu Sun,Meng Liang,Jianchang Yan,Tongbo Wei,Xiaoyan Yi,Junxi Wang,Jinmin Li,Peng Gao,Zhongfan Liu,Zhiqiang Liu

DOI: https://doi.org/10.1002/smll.202100098

IF: 13.3

2021-03-31

Small

Abstract:The nitride films with high indium (In) composition play a crucial role in the fabrication of In‐rich InGaN‐based optoelectronic devices. However, a major limitation is In incorporation requiring a low temperature during growth at the expense of nitride dissociation. Here, to overcome this limitation, a strain‐modulated growth method, namely the graphene (Gr)‐nanorod (NR) enhanced quasi‐van der Waals epitaxy, is proposed to increase the In composition in InGaN alloy. The lattice transparency of Gr enables constraint of in‐plane orientation of nitride film and epitaxial relationships at the heterointerface. The Gr interlayer together with NRs buffer layer substantially reduces the stress of the GaN film by 74.4%, from 0.9 to 0.23 GPa, and thus increases the In incorporation by 30.7%. The first principles calculations confirm that the release of strain accounts for the dramatic improvement. The photoluminescence peak of multiple quantum wells shifts from 461 to 497 nm and the functionally small‐sized cyan light‐emitting diodes of 7 × 9 mil2 are demonstrated. These findings provide an efficient approach for the growth of In‐rich InGaN film and extend the applications of nitrides in advanced optoelectronic, photovoltaic, and thermoelectric devices.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Graphene-Based LED: from Principle to Devices

Zhaolong Chen,Peng Gao,Zhongfan Liu

DOI: https://doi.org/10.3866/PKU.WHXB201907004

2020-01-01

Acta Physico-Chimica Sinica

Abstract:Group-III nitride (III-N) films have numerous applications in LEDs, lasers, and high-power/high-frequency electronic devices because of their direct wide band gap, high breakdown voltage, high saturation velocity of electrons, and high stability. Commercial III-N films are usually heteroepitaxially grown on c-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). However, relatively large mismatches occur in the in-plane lattice and thermal expansion between the III-N films and sapphire substrates, which lead to high stress and high dislocation density in epilayers that reduce the performance of the LED. Moreover, the poor thermal conductivity of sapphire substrate also hinders many applications. Recently, graphene was used as a buffer layer to overcome the mismatch between III-N films and substrates by utilizing van der Waals epitaxy and improving heat dissipation. In this review article, we consider the recent progress in the development of a new type of epitaxial substrate, the so-called "graphene/sapphire substrate" for III-N film growth and LED applications. The growth mechanisms are summarized and future prospects are proposed. The article is divided into three parts. 1. The synthesis of graphene/sapphire substrate. High-quality monolayer graphene is directly synthesized on sapphire substrates (flat substrate and nanopatterned substrate) by metal-catalyst-free CVD method. The method does not depend on the metal catalyst nor involve a complex and highly technical transfer process, and is compatible with the MOCVD and molecular beam epitaxy process. 2. Growth of high-quality III-N films on graphene/sapphire substrates. The nucleation of III-N on graphene can be tuned by the density of defects in the graphene film. N-2 plasma treatment of the graphene/sapphire substrate can increase the nucleation sites for III-N growth by introducing pyrrolic nitrogen doping. Epitaxial lateral overgrowth of the III-N is promoted on the graphene/sapphire substrate owing to the relatively lower diffusion barrier of atoms on graphene. Consequently, the biaxial stress in group-III nitride is significantly decreased while the dislocation density is reduced even without a low-temperature buffer layer. Moreover, vertically-oriented graphene nanowalls can effectively improve the heat dissipation in AlN films. 3. High-performance LEDs on graphene/sapphire substrate. High-quality III-N films obtained on graphene/sapphire substrates enable LED fabrication. The as-fabricated LEDs on graphene/sapphire substrate deliver much higher light output power compared with that on bare sapphire substrate. The as-fabricated LEDs have low turn-on voltage, high output power, and good reliability. Graphene can also be utilized as transfer medium or transparent conductive electrode to boost LED performance.
High-Quality Transferred GaN-Based Light-Emitting Diodes through Oxygen-Assisted Plasma Patterning of Graphene

Yanqing Jia,Jing Ning,Jincheng Zhang,Boyu Wang,Chaochao Yan,Yu Zeng,Haidi Wu,Yachao Zhang,Xue Shen,Chi Zhang,Haibin Guo,Dong Wang,Yue Hao

DOI: https://doi.org/10.1021/acsami.1c04659

2021-06-28

Abstract:Two-dimensional (2D) release layers are commonly used to realize flexible nitride films. Here, high-quality, large-area, and transferable nitride films can be precisely controlled grown on O2-plasma-assisted patterned graphene. The first-principles calculation indicates that the patterned graphene introduced by O2 plasma changes the original wettability of sapphire and the growth behavior of Al atoms is related with layer number of graphene, which is consistent with experimental results. The as-fabricated violet GaN-based light-emitting diodes (LEDs) show high stability and high light output power (LOP). This work provides a general rule for the growth of high-quality and transferable III-nitride films on graphene from the atomic scale and provide actual demonstration in LED. The advantages of the proposed new growth method can supply new ways for electronic and optoelectronic flexible devices of group III nitride semiconductors.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c04659?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c04659</a>.Adsorption energy of Al atoms adsorbed on different sites of substrate. Schematic of the probability distribution of Al atoms on the graphene and sapphire. Adsorption energy of Al atoms adsorbed on different sites of graphene. Surface coverage of AlN for a different number of graphene layers. X-ray rocking curves of (002) AlN and (102) AlN grown on the patterned graphene and of (002) AlN grown on the patterned graphene and the intact graphene. XPS data of sapphire/patterned graphene/AlN. Raman spectra of graphene before and after AlN growth. Raman mapping of 2D peak of graphene on substrate after AlN growth. (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c04659/suppl_file/am1c04659_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Heteroepitaxial GaAs thin-films on flexible, large-area, single-crystal-like substrates for wide-ranging optoelectronic applications

Gokul Radhakrishnan,Kyunghoon Kim,Ravi Droopad,Amit Goyal

DOI: https://doi.org/10.1038/s41598-024-59686-0

IF: 4.6

2024-05-04

Scientific Reports

Abstract:Recent advances in semiconductor based electronic devices can be attributed to the technological demands of ever increasing, application specific markets. These rapidly evolving markets for devices such as displays, wireless communication, photovoltaics, medical devices, etc. are demanding electronic devices that are increasingly thinner, smaller, lighter and flexible. High-quality, III-V epitaxial thin-films deposited on single-crystal substrates have yielded extremely high-performance, but are extremely expensive and rigid. Here we demonstrate heteroepitaxial deposition of GaAs thin-films on large-grained, single-crystal-like, biaxially-aligned, flexible, metallic substrates. We use molecular beam epitaxy (MBE) for the controlled growth of high quality GaAs layers on lattice matched Ge capped, flexible metal substrates. The structural, optical, interfacial and electrical characteristics and properties of the heteroepitaxial GaAs layers are analyzed and discussed. The results show that heteroepitaxial GaAs layers with good crystalline and optoelectronic properties can be realized for flexible, III-V based semiconductor devices. III-V materials integrated on large-grained, single-crystal-like, flexible, metallic substrates offer a potential route towards fabrication of large-area, high-performance electronic devices.

multidisciplinary sciences
Atomic layer deposition and application of group III nitrides semiconductor and their alloys

Peng Qiu,Heng Liu,Xiao-Li Zhu,Feng Tian,Meng-Chao Du,Hong-Yu Qiu,Guan-Liang Chen,Yu-Yu Hu,De-Lin Kong,Jin Yang,Hui-Yun Wei,Ming-Zeng Peng,Xin-He Zheng,

DOI: https://doi.org/10.7498/aps.73.20230832

IF: 0.906

2024-01-01

Acta Physica Sinica

Abstract:Group III nitride semiconductors, such as GaN, AlN, and InN, are an important class of compound semiconductor material, and have attracted much attention, because of their unique physicochemical properties. These semiconductors possess excellent characteristics, such as wide direct bandgap, high breakdown field strength, high electron mobility, and good stability, and thus are called third-generation semiconductors. Their alloy materials can adjust their bandgaps by changing the type or proportion of group III elements, covering a wide wavelength range from near-ultraviolet to infrared, thereby achieving wavelength selectivity in optoelectronic devices. Atomic layer deposition (ALD) is a unique technique that produces high-quality group III nitride films at low temperatures. The ALD has become an important method of preparing group III nitrides and their alloys. The alloy composition can be easily controlled by adjusting the ALD cycle ratio. This review highlights recent work on the growth and application of group III nitride semiconductors and their alloys by using ALD. The work is summarized according to similarities so as to make it easier to understand the progress and focus of related research. Firstly, this review summarizes binary nitrides with a focus on their mechanism and application. In the section on mechanism investigation, the review categorizes and summarizes the effects of ALD precursor material, substrate, temperature, ALD type, and other conditions on film quality. This demonstrates the effects of different conditions on film growth behavior and quality. The section on application exploration primarily introduces the use of group III nitride films in various devices through ALD, analyzes the enhancing effects of group III nitrides on these devices, and explores the underlying mechanisms. Additionally, this section discusses the growth of group III nitride alloys through ALD, summarizing different deposition methods and conditions. Regarding the ALD growth of group III nitride semiconductors, there is more research on the ALD growth of AlN and GaN, and less research on InN and its alloys. Additionally, there is less research on the ALD growth of GaN for applications, as it is still in the exploratory stage, while there is more research on the ALD growth of AlN for applications. Finally, this review points out the prospects and challenges of ALD in preparation of group III nitride semiconductors and their alloys.

physics, multidisciplinary
Progress in efficient doping of high aluminum-containing group III-nitrides

Y.-H. Liang,E. Towe

DOI: https://doi.org/10.1063/1.5009349

IF: 15

2018-03-01

Applied Physics Reviews

Abstract:The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

physics, applied

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