Abstract:Group III nitride semiconductors, such as GaN, AlN, and InN, are an important class of compound semiconductor material, and have attracted much attention, because of their unique physicochemical properties. These semiconductors possess excellent characteristics, such as wide direct bandgap, high breakdown field strength, high electron mobility, and good stability, and thus are called third-generation semiconductors. Their alloy materials can adjust their bandgaps by changing the type or proportion of group III elements, covering a wide wavelength range from near-ultraviolet to infrared, thereby achieving wavelength selectivity in optoelectronic devices. Atomic layer deposition (ALD) is a unique technique that produces high-quality group III nitride films at low temperatures. The ALD has become an important method of preparing group III nitrides and their alloys. The alloy composition can be easily controlled by adjusting the ALD cycle ratio. This review highlights recent work on the growth and application of group III nitride semiconductors and their alloys by using ALD. The work is summarized according to similarities so as to make it easier to understand the progress and focus of related research. Firstly, this review summarizes binary nitrides with a focus on their mechanism and application. In the section on mechanism investigation, the review categorizes and summarizes the effects of ALD precursor material, substrate, temperature, ALD type, and other conditions on film quality. This demonstrates the effects of different conditions on film growth behavior and quality. The section on application exploration primarily introduces the use of group III nitride films in various devices through ALD, analyzes the enhancing effects of group III nitrides on these devices, and explores the underlying mechanisms. Additionally, this section discusses the growth of group III nitride alloys through ALD, summarizing different deposition methods and conditions. Regarding the ALD growth of group III nitride semiconductors, there is more research on the ALD growth of AlN and GaN, and less research on InN and its alloys. Additionally, there is less research on the ALD growth of GaN for applications, as it is still in the exploratory stage, while there is more research on the ALD growth of AlN for applications. Finally, this review points out the prospects and challenges of ALD in preparation of group III nitride semiconductors and their alloys.

Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

Growth Parametric Study of N-polar InGaN Films by Metalorganic Chemical Vapor Deposition

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over A-Plane SiC Substrates

Realization of N-polarity GaN Films on Graphene/sic Substrates by Interfacial Atomic Manipulation

High Quality InAlN/GaN Heterostructures Grown on Sapphire by Pulsed Metal Organic Chemical Vapor Deposition

High-resistivity Nitrogen-Polar GaN for GaN/AlGaN High Electron Mobility Transistors by Metalorganic Chemical Vapor Deposition

Progress in efficient doping of high aluminum-containing group III-nitrides

Growth of High-Quality Nitrogen-Polar GaN Film by Two-Step High-Temperature Method

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Pulsed Metal Organic Chemical Vapor Deposition of InAlN-based Heterostructures and Its Application in Electronic Devices

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Group-III nitride heteroepitaxial films approaching bulk-class quality

Atomic layer deposition and application of group III nitrides semiconductor and their alloys

Growth of High Quality N-polar N-Gan on Vicinal C-face N-Sic Substrates for Vertical Conducting Devices

Studies on Growth of N-polar InN Films by Pulsed Metal-Organic Vapor Phase Epitaxy

Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Growth of High Quality N-Al0.5ga0.5n Thick Films by Mocvd

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic InxGa1- xN