Abstract:Flexible electronics and mechanically bendable devices based on Group III-N semiconductor materials are emerging; however, there are several challenges in manufacturing, such as cost reduction, device stability and flexibility, and device-performance improvement. To overcome these limitations, it is necessary to replace the brittle and expensive semiconductor wafers with single-crystalline flexible templates for a new-bandgap semiconductor platform. The substrates in the new concept of semiconductor materials have a hybrid structure consisting of a single-crystalline III-N thin film on a flexible metal tape substrate which provides a convenient and scalable roll-to-roll deposition process. We present a detailed study of a unique and simple direct epitaxial growth technique for crystallinity transformation to deliver single-crystalline GaN thin film with highly oriented grains along both a-axis and c-axis directions on a flexible and polycrystalline copper tape. A 2-dimensional (2D) graphene having the same atomic configuration as the (0001) basal plane of wurtzite structure is employed as a seed layer which plays a key role in following the III-N epitaxy growth. The DC reactive magnetron sputtering method is then applied to deposit an AlN layer under optimized conditions to achieve preferred-orientation growth. Finally, single-crystalline GaN layers (similar to 1 mu m) are epitaxially grown using metal organic chemical vapor deposition (MOCVD) on the biaxially-textured buffer layer. The flexible single-crystalline GaN film obtained using this method provides a new way for a wide-bandgap semiconductor platform pursuing flexible, high-performance, and versatile device technology.

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022)

Realization of N-polarity GaN Films on Graphene/sic Substrates by Interfacial Atomic Manipulation

N-polar AlN nucleation layers grown by hot-wall MOCVD on SiC: Effects of substrate orientation on the polarity, surface morphology and crystal quality

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over A-Plane SiC Substrates

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Optical Anisotropy Modulation in Nonpolar A-Plane AlGaN by Manipulating the Anisotropic In-Plane Strains Through SiNx Interlayers Engineering

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Flexible single-crystalline GaN substrate by direct deposition of III-N thin films on polycrystalline metal tape

GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

Lattice Polarity Manipulation of AlN Films on SiC Substrates for N-Polar GaN HEMTs

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Graphene‐Assisted Epitaxy of Nitrogen Lattice Polarity GaN Films on Non‐Polar Sapphire Substrates for Green Light Emitting Diodes

Polarity control by inversion domain suppression in N-polar III-nitride heterostructures

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Crystallographic Plane and Topography-Dependent Growth of Semipolar InGaN Nanorods on Patterned Sapphire Substrates by Molecular Beam Epitaxy

Group-III nitride heteroepitaxial films approaching bulk-class quality