Abstract:It is significant to prepare large-scale and high-quality graphene on SiC substrate for the research of the device in nanoelectronics. This review presents a brief overview on the progress in the growth mechanism for epitaxial graphene on SiC substrate surface, the methods of modification and the research of graphene-based devices. Graphene has attracted the interest of the scientists due to its exceptional electronic properties, which make it a promising material for nanoelectronics. Nowadays, the high-quality epitaxial graphene can be obtained with the smooth morphology, few defects, large size by controling the environment, annealing temperature and vapor pressure. The special structure that the first carbon layer grown above the Si-terminated SiC substrate form strong covalent bonds with substrate, results in some unusual properties such as opening a band gap in the graphene bilayer and a n-type doping of the graphene layers. The rotated fault, which is owed to decoupling effect, has been observed in C-terminated multilayer graphene. And such intrinsic properties of graphene depend on the atom type of SiC surface, surface state, weakness of bonds and the transformation of the electrons between the few-layer graphene and SiC substrate. Some limitations (such as little band gap, intrinsic n-type character, etc.) resulted from the properties of epitaxial graphene must be overcome for the device application. Thus tremendous effort has been devoted to achieve the deliberate control of the band gap, the density and character of its charge carriers. Having a deep understanding of the unique properties for epitaxial graphene, this article then selectively reviews modification methods by considing the type of atoms, size of atoms, work function and electron affinity. In order to manufacture well-behaved devices, many of the fundamental problems of graphene-based eletronics, including methods to make metal contacts, nanoscale patterning and other technical details should be addressed perfectly. It is also important to control the material of gate, modulate the face of substrate, the width of channel in order to improve the performance of the graphene-based devices such as carrier mobility and I-on/I-off ratios. The combination between the experiment and calculation (such as Monte Carlo simulation, density functional theory, molecular dynamics simulation etc.) can make a deeper understanding of the effects of SiC substrate and the methods of modification, which can be served as a guide for further research.

GaN‐on‐Si(100): Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene (adv. Funct. Mater. 42/2019)

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Epitaxial Growth Mechanisms of Single-Crystalline GaN on Single-Crystalline Graphene

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Progress of Properties, Modification and Applications of Graphene on SiC Substrate

Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer (Small 41/2022)

AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene As a Buffer Layer

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Investigation of preparation and properties of epitaxial growth GaN film on Si(1 1 1) substrate

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Van der Waals Self-Assembled Silica-Nanosphere/Graphene Buffer Layer for High-Quality Gallium Nitride Growth

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Graphene‐Assisted Epitaxy of High‐Quality GaN Films on GaN Templates

Van Der Waals Epitaxy of SnS Film on Single Crystal Graphene Buffer Layer on Amorphous SiO2/Si

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates

Polarization‐Driven‐Orientation Selective Growth of Single‐Crystalline III‐Nitride Semiconductors on Arbitrary Substrates (Adv. Funct. Mater. 14/2022)