Graphene Buffer Layer on SiC as a Release Layer for High-Quality Freestanding Semiconductor Membranes

Kuan Qiao,Yunpeng Liu,Chansoo Kim,Richard J. Molnar,Tom Osadchy,Wenhao Li,Xuechun Sun,Huashan Li,Rachael L. Myers-Ward,Doyoon Lee,Shruti Subramanian,Hyunseok Kim,Kuangye Lu,Joshua A. Robinson,Wei Kong,Jeehwan Kim

DOI: https://doi.org/10.1021/acs.nanolett.1c00673

IF: 10.8

2021-04-26

Nano Letters

Abstract:Free-standing crystalline membranes are highly desirable owing to recent developments in heterogeneous integration of dissimilar materials. Van der Waals (vdW) epitaxy enables the release of crystalline membranes from their substrates. However, suppressed nucleation density due to low surface energy has been a challenge for crystallization; reactive materials synthesis environments can induce detrimental damage to vdW surfaces, often leading to failures in membrane release. This work demonstrates a novel platform based on graphitized SiC for fabricating high-quality free-standing membranes. After mechanically removing epitaxial graphene on a graphitized SiC wafer, the quasi-two-dimensional graphene buffer layer (GBL) surface remains intact for epitaxial growth. The reduced vdW gap between the epilayer and substrate enhances epitaxial interaction, promoting remote epitaxy. Significantly improved nucleation and convergent quality of GaN are achieved on the GBL, resulting in the best quality GaN ever grown on two-dimensional materials. The GBL surface exhibits excellent resistance to harsh growth environments, enabling substrate reuse by repeated growth and exfoliation.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.nanolett.1c00673?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.nanolett.1c00673</a>.Methods and Figure S1 (<a class="ext-link" href="/doi/suppl/10.1021/acs.nanolett.1c00673/suppl_file/nl1c00673_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology

What problem does this paper attempt to address?

The paper primarily addresses the issue of fabricating high-quality freestanding semiconductor films on 2D materials, particularly focusing on the technical challenges of achieving high-quality crystal growth and successfully releasing crystal films on non-polar 2D materials such as graphene. Specifically, the paper proposes a novel method that utilizes graphitized SiC (silicon carbide) as a substrate to prepare high-quality, releasable semiconductor films. In this method, the epitaxial graphite layer on the surface of the graphitized SiC is mechanically removed to expose the underlying graphene buffer layer (GBL). This buffer layer not only enhances the interaction between the crystal layer and the SiC substrate, thereby promoting remote epitaxial growth and improving crystal quality, but its quasi-2D nature also allows the grown crystal film to be released without damaging the substrate. Additionally, the buffer layer exhibits good tolerance, maintaining stability even in harsh growth environments, which allows the substrate to be reused. The paper focuses on the growth processes of gallium nitride (GaN) and zinc oxide (ZnO) films on the GBL, demonstrating that these films possess very high crystal quality and low defect density. This indicates that the method can be effectively applied to prepare high-quality freestanding films of various wide-bandgap semiconductor materials.

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