High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process

Hyunseok Kim,Yunpeng Liu,Kuangye Lu,Celesta S. Chang,Dongchul Sung,Marx Akl,Kuan Qiao,Ki Seok Kim,Bo-In Park,Menglin Zhu,Jun Min Suh,Jekyung Kim,Junseok Jeong,Yongmin Baek,You Jin Ji,Sungsu Kang,Sangho Lee,Ne Myo Han,Chansoo Kim,Chanyeol Choi,Xinyuan Zhang,Hyeong-Kyu Choi,Yanming Zhang,Haozhe Wang,Lingping Kong,Nordin Noor Afeefah,Mohamed Nainar Mohamed Ansari,Jungwon Park,Kyusang Lee,Geun Young Yeom,Sungkyu Kim,Jinwoo Hwang,Jing Kong,Sang-Hoon Bae,Yunfeng Shi,Suklyun Hong,Wei Kong,Jeehwan Kim

DOI: https://doi.org/10.1038/s41565-023-01340-3

IF: 38.3

2023-03-21

Nature Nanotechnology

Abstract:Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III–N and III–V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.

materials science, multidisciplinary,nanoscience & nanotechnology

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a high - throughput and low - cost manufacturing technology for single - crystal semiconductor thin films. Specifically, the researchers proposed a new method based on two - dimensional material layer transfer (2D Layer Transfer, 2DLT), which can produce multiple single - crystal semiconductor thin films on a single wafer without additional refurbishment treatment of the wafer. This method can not only improve production efficiency, but also significantly reduce the manufacturing cost of non - silicon electronic devices, especially for the production of III - V and III - N compound semiconductor materials.

The key innovation points in the paper include:
1. **Direct growth of two - dimensional materials**: Directly grow two - dimensional materials, such as boron nitride (BN) and thin amorphous carbon (TAC), on III - V and III - N compound semiconductor wafers, avoiding defects and pollution in the traditional transfer process.
2. **Multilayer stack growth**: Form a multilayer alternating two - dimensional material and epitaxial layer structure through a single growth process, so that multiple independent single - crystal thin films can be harvested from a single wafer.
3. **Atomically precise exfoliation**: Use mechanical exfoliation technology to achieve layer - by - layer exfoliation. Each thin film can be separated from the wafer with atomic - level precision, and the wafer can be reused without complex steps such as chemical - mechanical polishing (CMP).
4. **High - throughput production**: Through the above technologies, high - throughput single - crystal thin - film production can be achieved, significantly reducing manufacturing costs and improving production efficiency.

The development of these technologies provides a new approach for the manufacturing of high - performance electronic devices, and has broad prospects especially in the applications of heterogeneous integrated electronics and functional device platforms.