Freestanding Crystalline Β-Ga2o3 Flexible Membrane Obtained Via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device.

Chao Lu,Mengcheng Li,Lei Gao,Qinghua Zhang,Mingtong Zhu,Xiangyu Lyu,Yuqian Wang,Jin Liu,Pengyu Liu,Lu Wang,Huayu Tao,Jiayi Song,Ailing Ji,Peigang Li,Lin Gu,Zexian Cao,Nianpeng Lu
DOI: https://doi.org/10.1021/acsnano.3c10025
IF: 17.1
2024-01-01
ACS Nano
Abstract:Wearable and flexible beta-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible beta-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline beta-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible beta-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid beta-Ga2O3 film-based devices. Moreover, based on the transferred beta-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/beta-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible beta-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.
What problem does this paper attempt to address?