Abstract:III-V semiconductor nanowires are considered promising building blocks for advanced photonic devices. One of the key advantages is that the lattice mismatch can easily be accommodated in 1D structures, resulting in superior heteroepitaxial quality compared to thin films. However, few reports break the limitation of using bulk crystalline materials as substrates for epitaxial growth of high-quality photonic 1D components, making monolithic integration of III-V components on arbitrary substrates challenging. In this work, we show that the growth of self-catalyzed GaAsSb nanowires on graphitic substrates can be promoted by creating step edges of monolayer thickness on kish graphite before the growth. By further alternating the deposition sequence of the group-III element Al and the group-V elements As and Sb, it was found that triangular crystallites form when Al is deposited first. This indicates that the surface binding energy between the graphitic surface and the III-V nucleus profoundly influences the epitaxial growth of III-V materials on graphitic surfaces. Using the optimized growth recipe with an AlAsSb buffer nuclei, vertical [111]-oriented GaAsSb/GaAs nanowires with GaAsSb-based multiple axial superlattices were grown on exfoliated graphite, which was attached to a (001) AlAs/GaAs distributed Bragg reflector (DBR) using the simple Scotch tape method. Fabry-Pérot resonance modes were observed under optical excitation at room temperature, indicating a successful monolithic integration with optical feedback from the DBR system. These results demonstrate the great potential for flexible integration of high-efficiency III-V nanowire photonic devices on arbitrary photonic platforms using a 2D material buffer layer, e.g., graphene, without breaking the orientation registry.

AlGaN Nanowires Grown on SiO2/Si (100) Using Graphene As a Buffer Layer

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Studies on the Nucleation of Mbe Grown Iii-Nitride Nanowires on Si

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

The influence of an AlN seeding layer on nucleation of self-assembled GaN nanowires on silicon substrates

Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer

Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire

Growth of GaN Nanowires on Graphene

One-Step, Catalyst-Free, Scalable in Situ Synthesis of Single-Crystal Aluminum Nanowires in Confined Graphene Space

Quasi van der Waals Epitaxial Growth of GaAsSb Nanowires on Graphitic Substrate for Photonic Applications

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation

Structural and optical properties of self-assembled AlN nanowires grown on SiO2/Si substrates by molecular beam epitaxy

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene