Abstract:GaN has shown great potential for high-power high-frequency electronic devices and short-wavelength optical devices. To integrate GaN-based optoelectronic devices with Si-based electronic devices and reduce the cost, it is desirable to grow epitaxial GaN thin films and device structures on the Si substrate. However, a proper buffer layer is essential for epitaxial growth of GaN films on Si substrate due to large mismatch between them in the area of lattice constant, thermal expansion coefficient and chemistry feature. In the present work, the growth of AlN buffer layer was studied. Wurtzite aluminum nitride thin films were grown on Si (111) and Si (100) substrates using reactive sputtering deposition under different discharge powers. X-ray diffraction (XRD) patterns showed that full width at half maximum (FWHM) of AlN (0002) peak grown on Si (111) substrates was smaller than that grown on Si (100) substrates. Vibrational characterization by Fourier transform infrared spectroscopy (FTIR) revealed that the stress in the AlN films deposited on Si (111) substrates was also smaller than that deposited on Si (100) substrates. For Si (100) substrates, the large lattice mismatch between AlN (0001) and Si (100) is a main contribution to the large strain in the formed films. For Si (111) substrates, the strain in the films deposited on Si (111) largely depends on the discharge power in sputtering, and the strain due to defects and thermal mismatch contributes largely to the residual strain in the deposited films.

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

Three-step Growth of AlN Films on Sapphire Substrates by Metal Nitride Vapor Phase Epitaxy

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Three-Step Growth Optimization of AlN Epilayers by MOCVD

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Growth of AlN Films on Si ( 100 ) and Si ( 111 ) Substrates by Reactive Magnetron Sputtering

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Effect of High-Temperature Buffer Thickness on Quality of Aln Epilayer Grown on Sapphire Substrate by Metalorganic Chemical Vapor Deposition

Epitaxial Growth of High Quality AlN Films on Si Substrates

Hetero-Epitaxial Growth of AlN Deposited by DC Magnetron Sputtering on Si(111) Using a AlN Buffer Layer

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Epitaxial Growth of High-quality AlN Template on Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE